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NXP Semiconductors
PNX15xx/952x Series
Volume 1 of 1
Chapter 7: PCI-XIO Module
PNX15XX_PNX952X_SER_N_4
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 4.0 — 03 December 2007
7-253
Offset 0x04 0820
GPXIO_address
31:0
gpxio_addr
R/W
0
General Purpose XIO cycle address. This register sets the address
for an indirect read or write to/from XIO address space. Only 4 byte
writes are allowed in this register. The values programmed for bits 0
and 1 are not used by the XIO module. Refer to gpxio_ben.
Offset 0x04 0824
GPXIO_write_data
31:0
gpxio_wdata
R/W
0
General Purpose XIO cycle data. This register is programmed with
data for a write cycle.
Offset 0x04 0828
GPXIO_read_data
31:0
gpxio_rdata
R
0
General Purpose XIO cycle data. This register contains the data of
a read cycle after completion.
Offset 0x04 082C
GPXIO_ctrl
This register controls the type of access to XIO and provides status.
31:10
Reserved
R
0
9
gpxio_cyc_pending
R
0
1 = GPXIO transaction on XIO is pending.
0 = GPXIO has completed or not yet started.
8
gpxio_done
R
0
General Purpose XIO cycle complete. This bit is cleared by writing 1
to bit 6 or 7. It will also be cleared by writing to the GPXIO interrupt
clear register.
7
clr_gpxio_done
W
0
1 = Clear “gpxio_done.”
6
gpxio_init
R/W
0
1 = Initiate a transaction on XIO. The type of transaction will match
the prole of the selected aperture. This bit gets cleared if the cycle
has been initiated. This bit clears bit 8 if set.
5
Reserved
R
0
4
gpxio_rd
R/W
0
1 = Read command on XIO
0 = Write command on XIO
3:0
gpxio_ben
R/W
0
Active low byte enables to be used on the indirect XIO cycle. These
are used to determine how many bytes to access and the lower two
address bits for use in “gpxio_addr”.
Offset 0x04 0830
NAND-Flash controls
31:22
Reserved
21:16
nand_ctrls
R/W
17
This eld controls the type of NAND-Flash access cycle. The bits
are dened as follows:
[21]: 1= 64-MB device support; 0 = 32 MB and smaller device
support
[20]: 1 = Include data in access cycle; 0 access does not include
data phase(s)
[19:18] = No. of commands to be used in NAND-Flash access
[17:16] = No. of address phases to be used in NAND-Flash access.
For 64-MB devices, 11 provide four address phases and 10 provide
three address phases.
15:8
command_b
R/W
0
This is the second command for NAND-Flash when two commands
are required to complete a cycle.
7:0
command_a
R/W
0
This is the command type to be used with NAND-Flash cycles when
one or more commands are required to complete a cycle.
Table 8: Registers Description
Bit
Symbol
Acces
s
Value
Description