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參數(shù)資料
| 型號： | GE28F640W30TD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 |
| 封裝： | 0.75 MM PITCH, VFBGA-56 |
| 文件頁數(shù)： | 94/104頁 |
| 文件大小： | 1443K |
| 代理商： | GE28F640W30TD70 |
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28F640W30, 28F320W30, 28F128W30
Datasheet
Intel Wireless Flash Memory (W30)
June 2005
Order Number: 290702, Revision: 011
9
1.3
Conventions
The following abbreviated terms and phrases are used throughout this document:
1.8 V refers to the VCC operating voltage range of 1.7 V – 1.9 V (except where noted).
3.0 V refers to the VCCQ operating voltage range of 2.2 V - 3.3 V.
V
PP =12V refers to 12 V ± 5%.
When referring to registers, the term set means the bit is a logical 1, and cleared means the bit
is a logical 0.
The terms pin and signal are often used interchangeably to refer to the external signal
connections on the package. (Ball is the term used for BGA).
A word is 2 bytes, or 16 bits.
Signal names are in all CAPS (for example, WAIT).
Voltage applied to the signal is subscripted (for example, V
PP).
Throughout this document, references are made to top, bottom, parameter, and partition. To clarify
these references, the following conventions have been adopted:
A block is a group of bits (or words) that erase simultaneously with one block erase
instruction.
A main block contains 32 Kwords.
A parameter block contains 4 Kwords.
The Block Base Address (BBA) is the first address of a block.
A partition is a group of blocks that share erase and program circuitry and a common status
register.
The Partition Base Address (PBA) is the first address of a partition. For example, on a
32-Mbit top-parameter flash device, partition number 5 has a PBA of 0x140000.
The top partition is located at the highest physical flash device address. This partition can be
a main partition or a parameter partition.
The bottom partition is located at the lowest physical flash device address. This partition can
be a main partition or a parameter partition.
A main partition contains only main blocks.
A parameter partition contains a mixture of main blocks and parameter blocks.
A top parameter device (TPD) has the parameter partition at the top of the memory map with
the parameter blocks at the top of that partition. This flash device type was formerly referred to
as a top-boot flash device.
A bottom parameter device (BPD) has the parameter partition at the bottom of the memory
map with the parameter blocks at the bottom of that partition. This flash device type was
formerly referred to as a bottom-boot block flash device.
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