- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299156 > GE28F640W30TD70 (INTEL CORP) 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 PDF資料下載
參數(shù)資料
| 型號： | GE28F640W30TD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 |
| 封裝： | 0.75 MM PITCH, VFBGA-56 |
| 文件頁數(shù)： | 8/104頁 |
| 文件大?。?/td> | 1443K |
| 代理商： | GE28F640W30TD70 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁當前第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁
28F640W30, 28F320W30, 28F128W30
Datasheet
Intel Wireless Flash Memory (W30)
June 2005
Order Number: 290702, Revision: 011
11
The flash device Command User Interface (CUI) links the system processor to the internal flash
memory operation. A valid command sequence written to the CUI initiates the flash device Write
State Machine (WSM) operation, which automatically executes the algorithms, timings, and
verifications necessary to manage flash memory program and erase. An internal status register
provides ready/busy indication results of the operation (success, fail, and so on).
Three power-saving features– Automatic Power Savings (APS), standby, and RST#– can
significantly reduce power consumption.
The flash device automatically enters APS mode following read cycle completion.
Standby mode begins when the system deselects the flash memory by de-asserting CE#.
Driving RST# low produces power savings similar to standby mode. It also resets the part to
read-array mode (important for system-level reset), clears internal status registers, and
provides an additional level of flash device write protection.
2.2
Memory Map and Partitioning
The W30 flash memory device is divided into 4-Mbit physical partitions. This partitioning allows
simultaneous RWW or RWE operations, and enables users to segment code and data areas on
4-Mbit boundaries. The flash memory array is asymmetrically blocked, which enables system code
and data integration within a single flash device. Each block can be erased independently in block
erase mode. Simultaneous program and erase operations are not allowed; only one partition at a
time can be actively programming or erasing. See Table 1, “Bottom Parameter Memory Map” on
The 32-Mbit flash device has eight partitions.
The 64-Mbit flash device has 16 partitions.
The 128-Mbit flash device has 32 partitions.
Each flash device density contains one parameter partition and several main partitions. The 4-Mbit
parameter partition contains eight 4-Kword parameter blocks and seven 32-Kword main blocks.
Each 4-Mbit main partition contains eight 32-Kword blocks.
The bulk of the flash memory array is divided into main blocks that can store code or data, and
parameter blocks that allow storage of frequently updated small parameters that are normally
stored in EEPROM. By using software techniques, the word-rewrite functionality of EEPROMs
can be emulated.
..
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GEN12.5-120 | Programmable DC Power Supplies 750W/1500W |
| GEN12.5-60 | Programmable DC Power Supplies 750W/1500W |
| GFL750 | COPPER ALLOY, WIRE TERMINAL |
| GFL500 | COPPER ALLOY, WIRE TERMINAL |
| GFL350 | COPPER ALLOY, WIRE TERMINAL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GE28F800B3BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA |
| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F800C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| GE28F800C3BA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| GE28F800C3BC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
發(fā)布緊急采購，3分鐘左右您將得到回復。