參數(shù)資料
型號: GE28F640W30TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56
封裝: 0.75 MM PITCH, VFBGA-56
文件頁數(shù): 26/104頁
文件大?。?/td> 1443K
代理商: GE28F640W30TD70
28F640W30, 28F320W30, 28F128W30
June 2005
Intel Wireless Flash Memory (W30)
Datasheet
28
Order Number: 290702, Revision: 011
6.2
DC Voltage Characteristics
IPPW
VPP Program
4
0.05
0.10
0.05
0.10
mA
VPP = VPPL, Program in Progress
8
221637
VPP = VPPH, Program in Progress
IPPE
VPP Erase
4
0.05
0.10
0.05
0.10
mA
VPP = VPPL, Erase in Progress
822822
VPP = VPPH, Erase in Progress
Notes:
1.
All currents are RMS unless noted. Typical values at typical VCC, TA = +25°C.
2.
Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation. See ICCRQ
specification for details.
3.
Sampled, not 100% tested.
4.
VCC read + program current is the sum of VCC read and VCC program currents.
5.
VCC read + erase current is the sum of VCC read and VCC erase currents.
6.
ICCES is specified with the flash device deselected. If the flash device is read while in erase suspend, the current is
ICCES plus ICCR.
7.
VPP < VPPLK inhibits erase and program operations. Do not use VPPL and VPPH outside their valid ranges.
8.
VIL can undershoot to –0.4V and VIH can overshoot to VCCQ+0.4V for durations of 20 ns or less.
9.
If VIN>VCC the input load current increases to 10 A max.
10.
ICCS is the average current measured over any 5ms time interval 5 s after a CE# de-assertion.
11.
Refer to section Section 8.2, “Automatic Power Savings (APS)” on page 45 for ICCAPS measurement details.
Table 10.
DC Voltage Characteristics
Sym
Parameter
(1)
Note
VCCQ= 3.0 V
Unit
Test Conditions
32/64 Mbit
128 Mbit
Min
Max
Min
Max
VIL
Input Low
8
0
0.4
0
0.4
V
VIH
Input High
-
VCCQ
– 0.4
VCCQ
– 0.4
VCCQ
V
VOL
Output Low
--0.1
-0.1
V
VCC = VCCMin
VCCQ = VCCQMin
IOL = 100 A
VOH
Output High
-
VCCQ
– 0.1
-
VCCQ
– 0.1
-V
VCC = VCCMin
VCCQ = VCCQMin
IOH = –100 A
VPPLK
VPP Lock-Out
7
-
0.4
-
0.4
V
VLKO
VCC Lock
-
1.0
-
1.0
-
V
VILKOQ
VCCQ Lock
-
0.9
-
0.9
-
V
Note:
For all numbered note references in this table, refer to the notes in Table 9, “DC Current
Table 9.
DC Current Characteristics (Sheet 2 of 2)
Sym
Parameter (1)
Note
VCCQ= 3.0 V
Unit
Test Conditions
32/64 Mbit
128 Mbit
Typ
Max
Typ
Max
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