參數(shù)資料
型號: GE28F640W30TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56
封裝: 0.75 MM PITCH, VFBGA-56
文件頁數(shù): 75/104頁
文件大?。?/td> 1443K
代理商: GE28F640W30TD70
28F640W30, 28F320W30, 28F128W30
June 2005
Intel Wireless Flash Memory (W30)
Datasheet
72
Order Number: 290702, Revision: 011
12.3
Read-While-Write and Read-While-Erase
The Intel
Wireless Flash Memory (W30) supports flexible multi-partition dual-operation
architecture. By dividing the flash memory into many separate partitions, the flash device can read
from one partition while programing (Read-While-Write) or erasing (Read-While-Eras) in another
partition. Both of these features greatly enhance data storage performance.
The W30 flash memory device does not support simultaneous program and erase operations.
Attempting to perform operations such as these results in a command sequence error. Only one
partition can be programming or erasing while another partition is reading. However, one partition
can be in erase suspend mode while a second partition is performing a program operation, and yet
another partition is executing a read command. Table 18, “Command Codes and Descriptions” on
page 53 describes the command codes available for all functions.
相關(guān)PDF資料
PDF描述
GEN12.5-120 Programmable DC Power Supplies 750W/1500W
GEN12.5-60 Programmable DC Power Supplies 750W/1500W
GFL750 COPPER ALLOY, WIRE TERMINAL
GFL500 COPPER ALLOY, WIRE TERMINAL
GFL350 COPPER ALLOY, WIRE TERMINAL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GE28F800B3BA90 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA
GE28F800B3TA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F800C3BA70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
GE28F800C3BA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
GE28F800C3BC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)