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參數(shù)資料
| 型號(hào)： | GE28F640W30TD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 |
| 封裝： | 0.75 MM PITCH, VFBGA-56 |
| 文件頁(yè)數(shù)： | 23/104頁(yè) |
| 文件大?。?/td> | 1443K |
| 代理商： | GE28F640W30TD70 |
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28F640W30, 28F320W30, 28F128W30
Datasheet
Intel Wireless Flash Memory (W30)
June 2005
Order Number: 290702, Revision: 011
25
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Warning:
Stressing the flash device beyond the Absolute Maximum Ratings in Table 7 might cause
permanent damage. These are stress ratings only.
Notice: This datasheet contains information on products in the design phase of development. The information
here is subject to change without notice. Do not finalize a design with this information.
Table 7.
Absolute Maximum Ratings
Parameter
Maximum Rating
Note
Temperature under Bias
–40 °C to +85 °C
Storage Temperature
–65 °C to +125 °C
Voltage on Any Pin (except VCC, VCCQ, VPP)
–0.5 V to +3.8 V
VPP Voltage
–0.2 V to +14 V
VCC Voltage
–0.2 V to +2.45 V
VCCQ Voltage
–0.2 V to +3.8 V
1
Output Short Circuit Current
100 mA
Notes:
1.
All specified voltages are relative to VSS. Minimum DC voltage is –0.5 V on input/output
pins and –0.2 V on VCC and VPP pins. During transitions, this level might undershoot to
–2.0 V for periods < 20 ns. Maximum DC voltage on input/output pins is VCC +0.5 V which,
during transitions, might overshoot to VCC +2.0 V for periods < 20 ns.
2.
Maximum DC voltage on VPP might overshoot to +14.0 V for periods < 20 ns.
3.
VPP program voltage is normally VPPL. VPP can be 12 V ± 0.6 V for 1000 cycles on the main
blocks and 2500 cycles on the parameter blocks during program/erase.
4.
Output shorted for no more than one second. No more than one output shorted at a time.
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