參數(shù)資料
型號(hào): GE28F640W30TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56
封裝: 0.75 MM PITCH, VFBGA-56
文件頁(yè)數(shù): 24/104頁(yè)
文件大?。?/td> 1443K
代理商: GE28F640W30TD70
28F640W30, 28F320W30, 28F128W30
June 2005
Intel Wireless Flash Memory (W30)
Datasheet
26
Order Number: 290702, Revision: 011
5.2
Operating Conditions
Do not operate the W30 flash memory device beyond the Operating Conditions in Table 8.
Extended exposure beyond these Operating Conditions might affect flash device reliability.
Table 8.
Extended Temperature Operation
Symbol
Parameter1
Min
Nom
Max
Unit
Notes
TA
Operating Temperature
–40
25
85
°C
-
VCC
VCC Supply Voltage
1.7
1.8
1.90
V
VCCQ
I/O Supply Voltage
2.2
3.0
3.3
VPPL
VPP Voltage Supply (Logic Level)
0.90
1.80
1.95
VPPH
Factory Programming VPP
11.4
12.0
12.6
tPPH
Maximum VPP Hours
VPP = 12 V
-
80
Hours
Block
Erase
Cycles
Main and Parameter
Blocks
VPP < VCC
100,000
-
Cycles
Main Blocks
VPP = 12 V
-
1000
Parameter Blocks
VPP = 12 V
-
2500
Notes:
1.
Characteristics” on page 28 for specific voltage-range specifications.
2.
VPP is normally VPPL. VPP can be connected to 11.4 V–12.6 V for 1000 cycles on main
blocks for extended temperatures and 2500 cycles on parameter blocks at extended
temperature.
3.
Contact your Intel field representative for VCC/VCCQ operations down to 1.65 V.
4.
Characteristics” on page 29 for operating characteristics
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