參數(shù)資料
型號: GE28F640W30TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56
封裝: 0.75 MM PITCH, VFBGA-56
文件頁數(shù): 71/104頁
文件大?。?/td> 1443K
代理商: GE28F640W30TD70
28F640W30, 28F320W30, 28F128W30
Datasheet
Intel Wireless Flash Memory (W30)
June 2005
Order Number: 290702, Revision: 011
69
Figure 31.
Erase Suspend / Resume Flowchart
Erase
Completed
Write FFh
Erased Partition
Read Array
Data
0
No
Read
1
Program
Loop
Read Array
Data
1
Yes
Start
Write B0h
Any Address
Read Status
Register
SR[7] =
SR[6] =
Write D0h
Any Address
Erase Resumed
Read or
Program?
Done?
Write
Standby
Write
Erase
Suspend
Read Array
or Program
Erase
Resume
Data = B0h
Addr = Any address
Data = FFh or 40h
Addr = Any device address (except
block being erased)
Check SR[7]
1 = WSM ready
0 = WSM busy
Check SR[6]
1 = Erase suspended
0 = Erase completed
Data = D0h
Addr = Any address
Bus
Operation
Command
Comments
Read
Read SRD
Toggle CE# or OE# to update SRD
Addr = Any address in same partition
Read or
Write
Read array or program data from/to
block other than the one being erased
ERASE SUSPEND / RESUME PROCEDURE
Write 70h
Same Partition
Write
Read
Status
Data = 70h
Addr = Any address in same partition
Write 70h
Same Partition
If the suspended partition was placed in
Read Array mode or a Program Loop:
Write
Read
Status
Return partition to status mode:
Data = 70h
Addr = Address within same partition
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