- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299156 > GE28F640W30TD70 (INTEL CORP) 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 PDF資料下載
參數(shù)資料
| 型號： | GE28F640W30TD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 |
| 封裝： | 0.75 MM PITCH, VFBGA-56 |
| 文件頁數(shù)： | 45/104頁 |
| 文件大小： | 1443K |
| 代理商： | GE28F640W30TD70 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁當(dāng)前第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁
28F640W30, 28F320W30, 28F128W30
Datasheet
Intel Wireless Flash Memory (W30)
June 2005
Order Number: 290702, Revision: 011
45
8.0
Power and Reset Specifications
Intel
Wireless Flash Memory (W30) devices have a layered approach to power savings that can
significantly reduce overall system power consumption.
The APS feature reduces power consumption when the flash device is selected but idle.
If CE# is deasserted, the memory enters its standby mode, where current consumption is even
lower.
Asserting RST# provides current savings similar to standby mode.
The combination of these features can minimize memory power consumption, and therefore,
overall system power consumption.
8.1
Active Power
consumes the most power from the system. Minimizing flash device active current therefore
reduces system power consumption, especially in battery-powered applications.
8.2
Automatic Power Savings (APS)
Automatic Power Saving (APS) provides low power operation during a read active state. ICCAPS is
the average current measured over any 5 ms time interval, 5 s after CE# is deasserted. During
APS, average current is measured over the same time interval 5 s after the following events:
There is no internal read, program or erase activity.
CE# is asserted.
The address lines are quiescent, and at VIL or VIH.
OE# can be driven during APS.
8.3
Standby Power
When CE# is deasserted, the flash device is deselected and placed in standby, substantially
reducing power consumption. In standby, the data outputs are placed in High-Z, independent of the
level placed on OE#. Standby current, ICCS, is the average current measured over any 5 ms time
interval, 5 s after CE# is deasserted. During standby, average current is measured over the same
time interval 5 s after CE# is deasserted.
When the flash device is deselected (while CE# is deasserted) during a program or erase operation,
it continues to consume active power until the program or erase operation completes.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GEN12.5-120 | Programmable DC Power Supplies 750W/1500W |
| GEN12.5-60 | Programmable DC Power Supplies 750W/1500W |
| GFL750 | COPPER ALLOY, WIRE TERMINAL |
| GFL500 | COPPER ALLOY, WIRE TERMINAL |
| GFL350 | COPPER ALLOY, WIRE TERMINAL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GE28F800B3BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA |
| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F800C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| GE28F800C3BA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| GE28F800C3BC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。