參數(shù)資料
型號(hào): GE28F640W30TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56
封裝: 0.75 MM PITCH, VFBGA-56
文件頁(yè)數(shù): 67/104頁(yè)
文件大?。?/td> 1443K
代理商: GE28F640W30TD70
28F640W30, 28F320W30, 28F128W30
Datasheet
Intel Wireless Flash Memory (W30)
June 2005
Order Number: 290702, Revision: 011
65
The address can either remain constant or increment. The flash device compares the incoming
address to the address stored from the setup phase (WA0).
If the addresses match, the WSM programs the new data word at the next sequential memory
location.
If the addresses differ, the WSM jumps to the new address location.
The program phase concludes when the host programming system writes to a different block
address. The data supplied must be FFFFh. Upon program phase completion, the flash device
enters the EFP verify phase.
11.3.4
Verify
A high percentage of the flash memory bits program on the first WSM pulse. However, EFP
internal verification identifies cells that do not completely program on their first attempt, and
applies additional pulses as required.
The verify phase is identical in flow to the program phase, except that instead of programming
incoming data, the WSM compares the verify-stream data to the data that was previously
programmed into the block.
If the data compares correctly, the host programmer proceeds to the next word.
If the data does not match, the host waits while the WSM applies one or more additional
pulses.
The host programmer must reset its initial verify-word address to the same starting location
supplied during the program phase. It then reissues each data word in the same order as during the
program phase. Like programming, the host can write each subsequent data word to WA0 or it can
increment through the block addresses.
The verification phase concludes when the interfacing programmer writes to a different block
address. The data supplied must be FFFFh. Upon completion of the verify phase, the flash device
enters the EFP exit phase.
11.3.5
Exit
SR[7]=1 indicates that the flash device has returned to normal operating conditions. Perform a full
status check at this time, to verify that the entire block programmed successfully. After EFP exit,
any valid CUI command can be issued.
相關(guān)PDF資料
PDF描述
GEN12.5-120 Programmable DC Power Supplies 750W/1500W
GEN12.5-60 Programmable DC Power Supplies 750W/1500W
GFL750 COPPER ALLOY, WIRE TERMINAL
GFL500 COPPER ALLOY, WIRE TERMINAL
GFL350 COPPER ALLOY, WIRE TERMINAL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GE28F800B3BA90 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA
GE28F800B3TA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F800C3BA70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
GE28F800C3BA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
GE28F800C3BC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)