參數(shù)資料
型號: GE28F640W30TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56
封裝: 0.75 MM PITCH, VFBGA-56
文件頁數(shù): 78/104頁
文件大?。?/td> 1443K
代理商: GE28F640W30TD70
28F640W30, 28F320W30, 28F128W30
Datasheet
Intel Wireless Flash Memory (W30)
June 2005
Order Number: 290702, Revision: 011
75
13.1.3
Lock-Down
Locked-down blocks (state [011]) offer an additional level of write protection beyond the
protection of a regular locked block. If a block is locked-down, the software cannot change the
state of the block if WP# is asserted.
To lock-down a locked or unlocked block, write the Lock-Down Block command sequence.
If a block was set to locked-down, then later changed to unlocked, issue the Lock-down
command before asserting WP#, to put that block back in the locked-down state.
When WP# is deasserted, locked-down blocks change to the locked state, and can then be
unlocked using the Unlock Block command.
13.1.4
Block Lock Status
The lock status of every block can be read in read identifier mode.
Note:
To enter this mode, issue the Read Identifier command to the flash device.
Subsequent reads at BBA + 02h output the lock status of that block. For example, to read the block
lock status of block 10, the address sent to the flash device must be 50002h (for a top-parameter
device).
The lowest two data bits of the read data, DQ1 and DQ0, represent the lock status.
DQ0 indicates the block lock status. This bit is set using the Lock Block command and cleared
using the Block Unlock command. It is also set when entering the lock-down state.
DQ1 indicates lock-down status and is set using the Lock-Down command.
The lock-down status bit cannot be cleared by software–only by a flash device reset or
power-down. See Table 25.
Table 25.
Write Protection Truth Table
VPP
WP#
RST#
Write Protection
XX
VIL
Device is inaccessible
VIL
XVIH
Word program and block erase are prohibited
XVIL
VIH
All lock-down blocks are locked
XVIH
VIH
All lock-down blocks can be unlocked
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