型號 廠商 描述
ixsn35n120au1
2 3 4		 IXYS CORP High Voltage IGBT with Diode
ixsn50n60bd2
2 3 4 5		 IXYS CORP High Speed IGBT with HiPerFRED(VCES為600V，VCE(sat)為2.5V的高速絕緣柵雙極晶體管(帶Hiper快速恢復(fù)外延型二極管))
ixsn52n60au1
2 3 4 5		 IXYS CORP IGBT with Diode(VCES為600V，VCE(sat)為3V的絕緣柵雙極晶體管(帶二極管）)
ixsn55n120au1
2		 IXYS CORP High Voltage IGBT with Diode(高電壓帶二極管的絕緣柵雙極晶體管)
ixsn55n120
2		 IXYS Corporation High Voltage IGBT
ixsn55n120a
2		 IXYS CORP High Voltage IGBT
ixsn62n60u1
2		 IXYS CORP IGBT with Diode - Short Circuit SOA Capability
ixsn80n60au1
2 3 4		 IXYS CORP IGBT with Diode(VCES為600V，VCE(sat)為3V的絕緣柵雙極晶體管（帶二極管）)
ixsn80n60a
2		 IXYS CORP High Current IGBT(VCES為600V，VCE(sat)為3V的大電流絕緣柵雙極晶體管)
ixsn80n60bd1
2		 IXYS CORP IGBT with Diode Short Circuit SOA Capability
ixsp16n60
2		 IXYS CORP Low V CE(sat) IGBT - Short Circuit SOA Capability
ixsa16n60
2		 IXYS CORP Low VCE(sat) IGBT(VCE(sat)典型值為1.8V的絕緣柵雙極晶體管)
ixsr35n120bd1
2		 IXYS CORP IGBT with Diode(VCES為1200V，VCE(sat)為3.6V的絕緣柵雙極晶體管（帶二極管）)
ixsr40n60cd1
2		 IXYS CORP IGBT with Diode(VCES為600V，VCE(sat)為2.5V的絕緣柵雙極晶體管(帶二極管))
ixsx35n120au1
2 3 4 5		 IXYS CORP High Voltage IGBT with Diode(VCES為1200V，VCE(sat)為4V的高電壓絕緣柵雙極晶體管(帶二極管）)
ixsx50n60au1
2 3 4 5		 IXYS CORP IGBT with Diode Combi Pack - Short Circuit SOA Capability
ixsx50n60au1s
2 3 4 5		 IXYS CORP IGBT with Diode Combi Pack - Short Circuit SOA Capability
ixta05n100
2		 IXYS CORP N-Channel Enhancement Mode High Voltage MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻15Ω的N溝道增強(qiáng)型高電壓MOSFET)
ixta110n055p
2 3 4 5		 IXYS CORP PolarHT Power MOSFET
ixtp110n055p
2 3 4 5		 IXYS CORP PolarHT Power MOSFET
ixtq110n055p
2 3 4 5		 IXYS CORP PolarHT Power MOSFET
ixta180n055t
2 3 4 5		 IXYS CORP Trench Gate Power MOSFET
ixtp180n055t
2 3 4 5		 IXYS CORP Trench Gate Power MOSFET
ixtq180n055t
2 3 4 5		 IXYS CORP Trench Gate Power MOSFET
ixta1n100
2		 IXYS CORP High Voltage MOSFET
ixta1n80
2		 IXYS CORP High Voltage MOSFET
ixtp1n80
2		 IXYS CORP High Voltage MOSFET
ixty1n80
2		 IXYS CORP High Voltage MOSFET
ixta3n120
2 3 4		 IXYS CORP High Voltage Power MOSFETs
ixta3n110
2 3 4		 IXYS CORP High Voltage Power MOSFETs
ixta3n50p
2 3 4 5		 IXYS CORP PolarHV Power MOSFET
ixtp3n50p
2 3 4 5		 IXYS CORP PolarHV Power MOSFET
ixty3n50p
2 3 4 5		 IXYS CORP PolarHV Power MOSFET
ixta3n60p
2 3 4		 IXYS CORP R8C; R8C/2x Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 96K; RAM: 5K; ROM Type: Flash memory; CPU: R8C core; Minimum Instruction Execution Time (ns): 50 (@20MHz); Operating Frequency / Supply Voltage: 20MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -40 to 85; Package Code: PLQP0048KB-A (48P6Q-A)
ixta50n20p
2 3 4 5		 IXYS CORP PolarHT Power MOSFET N-Channel Enhancement Mode
ixtp50n20p
2 3 4 5		 IXYS CORP PolarHT Power MOSFET N-Channel Enhancement Mode
ixtq50n20p
2 3 4 5		 IXYS CORP PolarHT Power MOSFET N-Channel Enhancement Mode
ixta62n15p
2 3 4 5		 IXYS CORP PolarHT Power MOSFET
ixtp62n15p
2 3 4 5		 IXYS CORP PolarHT Power MOSFET
ixtq62n15p
2 3 4 5		 IXYS CORP PolarHT Power MOSFET
ixta75n10p
2 3 4 5		 IXYS CORP N-Channel Enhancement Mode
ixtp75n10p
2 3 4 5		 IXYS CORP N-Channel Enhancement Mode
ixtq75n10p
2 3 4 5		 IXYS CORP N-Channel Enhancement Mode
ixta8n50p
2 3 4 5		 IXYS CORP PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated
ixtp8n50p
2 3 4 5		 IXYS CORP PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated
ixtb30n100l
2 3 4 5		 IXYS CORP Power MOSFETs with Extended FBSOA
ixtn30n100l
2 3 4 5		 IXYS CORP Power MOSFETs with Extended FBSOA
ixtc13n50
2		 IXYS CORP Power MOSFET ISOPLUS220
ixtc26n50p
2 3 4 5		 IXYS CORP PolarHV Power MOSFET
ixth10n100
2 3 4		 IXYS CORP N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻1.20Ω的N溝道增強(qiáng)型MegaMOSFET)