型號: | IXTA3N50P |
廠商: | IXYS CORP |
元件分類: | JFETs |
英文描述: | PolarHV Power MOSFET |
中文描述: | 3.6 A, 500 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
封裝: | TO-263, 3 PIN |
文件頁數(shù): | 4/5頁 |
文件大?。?/td> | 241K |
代理商: | IXTA3N50P |
相關(guān)PDF資料 |
PDF描述 |
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IXTP3N50P | PolarHV Power MOSFET |
IXTY3N50P | PolarHV Power MOSFET |
IXTA3N60P | R8C; R8C/2x Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 96K; RAM: 5K; ROM Type: Flash memory; CPU: R8C core; Minimum Instruction Execution Time (ns): 50 (@20MHz); Operating Frequency / Supply Voltage: 20MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -40 to 85; Package Code: PLQP0048KB-A (48P6Q-A) |
IXTA50N20P | PolarHT Power MOSFET N-Channel Enhancement Mode |
IXTP50N20P | PolarHT Power MOSFET N-Channel Enhancement Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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IXTA3N60P | 功能描述:MOSFET 3 Amps 600V 2.9 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
IXTA42N25P | 功能描述:MOSFET 42 Amps 250V 0.084 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
IXTA44N15T | 功能描述:MOSFET 44 Amps 150V 45 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
IXTA44N25T | 功能描述:MOSFET 44 Amps 250V 72 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
IXTA44N30T | 功能描述:MOSFET 44 Amps 300V 85 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |