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參數(shù)資料
| 型號： | IXTA50N20P |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | PolarHT Power MOSFET N-Channel Enhancement Mode |
| 中文描述： | 50 A, 200 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | PLASTIC, TO-263, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 589K |
| 代理商： | IXTA50N20P |
2004 IXYS All rights reserved
G
D
S
(TAB)
G
S
(TAB)
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 175
°
C
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
200
200
V
V
V
GSM
±
20
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
50
A
A
120
50
A
E
AR
E
AS
30
mJ
1.0
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 10
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
360
W
T
J
T
JM
T
stg
-55 ... +175
°
C
°
C
°
C
175
-55 ... +125
T
L
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
300
260
°
C
°
C
M
d
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-220
TO-263
5.5
g
g
g
4
3
G = Gate
S = Source
D = Drain
TAB = Drain
DS99156A(04/04)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.5
5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 150
°
C
250
R
DS(on)
V
= 10 V, I
D
= I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
50
60
m
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-263 (I
XTA
)
TO-220 (I
XTP
)
D
(TAB)
G
S
IXTQ 50N20P
IXTA 50N20P
IXTP 50N20P
V
DSS
I
D25
R
DS(on)
= 60
m
= 200 V
= 50 A
TO-3P (I
XTQ
)
Preliminary Data Sheet
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| IXTA54N30T | 功能描述:MOSFET 54 Amps 300V 72 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTA56N15T | 功能描述:MOSFET 56 Amps 150V 36 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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