參數(shù)資料
型號： IXTA3N60P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： R8C; R8C/2x Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 96K; RAM: 5K; ROM Type: Flash memory; CPU: R8C core; Minimum Instruction Execution Time (ns): 50 (@20MHz); Operating Frequency / Supply Voltage: 20MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -40 to 85; Package Code: PLQP0048KB-A (48P6Q-A)
中文描述： 3 A, 600 V, 2.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 232K
代理商： IXTA3N60P
2006 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
600
600
V
V
V
GS
V
GSM
Continuous
Transient
±
30
±
40
V
V
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
3.0
A
A
6
I
AR
E
AR
E
AS
3
A
10
mJ
mJ
100
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 30
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5
V/ns
P
D
70
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
T
SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°
C
°
C
Weight
TO-220
TO-263
TO-252
4
3
g
g
g
0.35
Symbol
(T
J
= 25
°
C unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
DSS
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 50
μ
A
3.0
5.5
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
5
μ
A
μ
A
T
J
= 125
°
C
50
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
, Note 1
2.9
PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
IXTA 3N60P
IXTP 3N60P
IXTY 3N60P
V
DSS
I
D25
R
DS(on)
= 600
=
≤
2.9
V
A
3.0
DS99449E(04/06)
G = Gate
S = Source
D = Drain
TAB = Drain
TO-220 (IXTP)
S
TO-252 (IXTY)
(TAB)
TO-263 (IXTA)
G
S
D
G
(TAB)
G
S
(TAB)
相關PDF資料
PDF描述
IXTA50N20P PolarHT Power MOSFET N-Channel Enhancement Mode
IXTP50N20P PolarHT Power MOSFET N-Channel Enhancement Mode
IXTQ50N20P PolarHT Power MOSFET N-Channel Enhancement Mode
IXTA62N15P PolarHT Power MOSFET
IXTP62N15P PolarHT Power MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IXTA42N25P 功能描述:MOSFET 42 Amps 250V 0.084 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA44N15T 功能描述:MOSFET 44 Amps 150V 45 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA44N25T 功能描述:MOSFET 44 Amps 250V 72 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA44N30T 功能描述:MOSFET 44 Amps 300V 85 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA44P15T 功能描述:MOSFET -44 Amps -150V 0.065 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*