參數(shù)資料
型號(hào)： IXTP50N20P
廠商： IXYS CORP
元件分類： JFETs
英文描述： PolarHT Power MOSFET N-Channel Enhancement Mode
中文描述： 50 A, 200 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 589K
代理商： IXTP50N20P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 50N20P IXTP 50N20P
IXTQ 50N20P
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 50 A pulse test
12
23
S
C
iss
C
oss
C
rss
2250
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
500
125
pF
pF
t
d(on)
t
r
t
d(off)
t
f
26
35
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
R
G
= 10
(External)
70
30
ns
ns
Q
g(on)
Q
gs
Q
gd
70
17
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
37
nC
R
thJC
R
thCK
0.42K/W
(TO-3P)
(TO-220)
0.21
0.25
K/W
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
50
A
I
SM
Repetitive
120
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
= 25 A
-di/dt = 100 A/
μ
s
V
R
= 100 V
180
ns
Q
RM
2.0
μ
C
TO-3P (IXTQ) Outline
Pins:
1 - Gate
2 - Drain
TO-220 (IXTA) Outline
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-263 (IXTP) Outline
Notes: Test current I
T
= 50 A.
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