參數(shù)資料
型號： IXTY3N50P
廠商： IXYS CORP
元件分類： JFETs
英文描述： PolarHV Power MOSFET
中文描述： 3.6 A, 500 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： TO-252AA, 3 PIN
文件頁數(shù)： 2/5頁
文件大小： 241K
代理商： IXTY3N50P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
2.5
3.5
S
C
iss
C
oss
C
rss
409
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
48
pF
6.1
pF
t
d(on)
t
r
t
d(off)
t
f
15
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 20
(External)
15
ns
38
ns
12
ns
Q
g(on)
Q
gs
Q
gd
9.3
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
3.3
nC
3.4
nC
R
thJC
R
thCS
1.8
°
C/W
°
C/W
(TO-220)
0.25
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0 V
3
A
I
SM
Repetitive
5
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
F
= 3 A, -di/dt = 100 A/
μ
s
V
R
= 100 V, V
GS
= 0 V
400
ns
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Dim. Millimeter
Inches
Min.
Min.
Max.
Max.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
2.19
0.89
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
0.086
0.035
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0
0
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
2.28 BSC
4.57 BSC
9.40 10.42
0.51
0.64
0.89
2.54
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.090 BSC
0.180 BSC
0.370
0.020
0.025
0.035
0.100
0.410
0.040
0.040
0.050
0.115
1.02
1.02
1.27
2.92
TO-252 AA (IXTY) Outline
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTY3N60P 功能描述:MOSFET 3 Amps 600V 3 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTY44N10T 功能描述:MOSFET 44 Amps 100V 25.0 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTY48P05T 功能描述:MOSFET TrenchP Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTY4N60P 功能描述:MOSFET PolarHV Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTY50N085T 功能描述:MOSFET 50 Amps 85V 20.0 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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