參數(shù)資料
型號(hào)： IXTA1N100
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Voltage MOSFET
中文描述： 1.5 A, 1000 V, 11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA
封裝： TO-263AA, 3 PIN
文件頁數(shù)： 1/2頁
文件大小： 46K
代理商： IXTA1N100
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
1.5
A
A
6
I
AR
E
AR
E
AS
dv/dt
1.5
A
T
C
= 25
°
C
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 18
T
C
= 25
°
C
6
mJ
mJ
200
3
V/ns
P
D
T
J
T
JM
T
stg
M
d
Weight
54
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
4
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 25
μ
A
1000
2.5
V
V
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
500
μ
A
μ
A
R
DS(on)
V
= 10 V, I
D
= 1.0A
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
11
Features
International standard packages
High voltage, Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
High frequency matching
Advantages
Space savings
High power density
98545A (11/99)
GDS
TO-220AB (IXTP)
G
S
TO-263 AA (IXTA)
D (TAB)
V
DSS
I
D25
R
DS(on)
= 11
= 1000 V
= 1.5 A
Advanced Technical Information
IXTA 1N100
IXTP 1N100
N-Channel Enhancement Mode
Avalanche Energy Rated
IXYS reserves the right to change limits, test conditions, and dimensions.
High Voltage
MOSFET
相關(guān)PDF資料
PDF描述
IXTA1N80 High Voltage MOSFET
IXTP1N80 High Voltage MOSFET
IXTY1N80 High Voltage MOSFET
IXTA3N120 High Voltage Power MOSFETs
IXTA3N110 High Voltage Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTA1N100P 功能描述:MOSFET 1 Amps 1000V 14 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA1N100TRL 制造商:IXYS Integrated Circuits Division 功能描述:
IXTA1N120P 功能描述:MOSFET 1 Amps 1200V 20 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA1N80 功能描述:MOSFET 1 Amps 800V 11 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA1R4N100P 功能描述:MOSFET 1.4 Amps 1000V 11 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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