參數(shù)資料
型號： IXTC26N50P
廠商： IXYS CORP
元件分類： JFETs
英文描述： PolarHV Power MOSFET
中文描述： 15 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS220, 3 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 571K
代理商： IXTC26N50P
2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
V
500
V
V
GS
V
GSM
Continuous
±
20
±
30
V
Transient
V
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
13
A
78
A
I
AR
26
A
E
AR
E
AS
40
mJ
1.0
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
100
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
V
ISOL
F
C
50/60 Hz, RMS, t = 1, leads-to-tab
2500
V~
Mounting Force
11..65/2.5..15
N/lb
Weight
2
g
G = Gate
S = Source
D = Drain
DS99227(10/04)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.5
5.0
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 125
°
C
250
R
DS(on)
V
= 10 V, I
D
= I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
260
m
PolarHV
TM
Power MOSFET
V
DSS
I
D25
R
DS(on)
=
=
=
500
13
260
m
V
A
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Avalanche Rated
ISOPLUS220
TM
(IXTC)
E153432
Advanced Technical Information
G
DS
Isolated Tab
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
Advantages
z
Easy assembly
z
Space savings
z
High power density
IXTC 26N50P
相關(guān)PDF資料
PDF描述
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IXTH10P50 P-Channel Enhancement Mode Standard Power MOSFET(最大漏源擊穿電壓-500V,導(dǎo)通電阻0.90Ω的P溝道增強(qiáng)型標(biāo)準(zhǔn)功率MOSFET)
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