參數(shù)資料
型號(hào)： IXSN80N60AU1
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： IGBT with Diode(VCES為600V，VCE(sat)為3V的絕緣柵雙極晶體管（帶二極管）)
中文描述： 160 A, 600 V, N-CHANNEL IGBT
封裝： MINIBLOC-4
文件頁數(shù)： 1/4頁
文件大?。?/td> 96K
代理商： IXSN80N60AU1
1 - 4
2000 IXYS All rights reserved
G
E
E
C
94552E(7/00)
miniBLOC, SOT-227 B
E153432
Features
International standard package
miniBLOC
Aluminium-nitride isolation
- high power dissipation
Isolation voltage 3000 V~
UL registered E 153432
Low V
- for minimum on-state conduction
losses
Fast Recovery Epitaxial Diode
- short t
and I
Low collector-to-case capacitance
(< 60 pF)
- reduced RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 2 screws
High power density
E = Emitter
G = Gate,
,
C = Collector
E = Emitter
Either Emitter terminal can be used as
Main or Kelvin Emitter
IGBT with Diode
IXSN 80N60AU1
V
CES
I
C25
V
CE(sat)
= 600 V
= 160 A
= 3 V
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
A
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 30 H
160
80
320
A
A
A
I
= 160
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 22 , non repetitive
T
C
= 25 C
50/60 Hz
I
ISOL
1 mA
10
s
P
C
V
ISOL
500
W
t = 1 min
t = 1 s
2500
3000
V~
V~
T
J
T
JM
T
stg
M
d
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
C
E
E
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 8 mA, V
CE
= V
GE
600
V
V
4
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
1
mA
mA
15
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
ns
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
3
V
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXSN80N60A High Current IGBT(VCES為600V，VCE(sat)為3V的大電流絕緣柵雙極晶體管)
IXSN80N60BD1 IGBT with Diode Short Circuit SOA Capability
IXSP16N60 Low V CE(sat) IGBT - Short Circuit SOA Capability
IXSA16N60 Low VCE(sat) IGBT(VCE(sat)典型值為1.8V的絕緣柵雙極晶體管)
IXSR35N120BD1 IGBT with Diode(VCES為1200V，VCE(sat)為3.6V的絕緣柵雙極晶體管（帶二極管）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXSN80N60BD1 功能描述:IGBT 晶體管 160 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSP10N60B2D1 功能描述:IGBT 晶體管 10 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSP15N120B 功能描述:IGBT 晶體管 30 Amps 1200V 3.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSP16N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low V CE(sat) IGBT - Short Circuit SOA Capability
IXSP20N60B2D1 功能描述:IGBT 晶體管 20 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*