參數(shù)資料
型號(hào)： IXTA3N110
廠商： IXYS CORP
元件分類： JFETs
英文描述： High Voltage Power MOSFETs
中文描述： 3 A, 1100 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： PLASTIC, TO-263, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 102K
代理商： IXTA3N110
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA/IXTP 3N120
IXTA/IXTP 3N110
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, Note 1
1.5
2.2
S
C
iss
C
oss
C
rss
1050 1300
100
25
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
125
50
t
d(on)
t
r
t
d(off)
t
f
17
15
32
18
ns
ns
ns
ns
V
GS
R
G
= 4.7
(External),
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
Q
g(on)
Q
gs
Q
gd
39
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
9
22
R
thJC
R
thCK
0.8
K/W
K/W
(TO-220)
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
3
A
I
SM
Repetitive; pulse width limited by T
JM
12
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
700
ns
TO-263 (IXTA) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
.625
.110
.055
.070
.015
0
0
R
0.46
0.74
.018
.029
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
TO-220 (IXTP) Outline
Notes: 1. Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTA3N110TRL 制造商:IXYS Corporation 功能描述:IXTA Series Single N-Channel 1200 V 4 Ohm 150 W Power Mosfet - TO-263
IXTA3N120 功能描述:MOSFET 3 Amps 1200V 4.5 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA3N120TRL 功能描述:MOSFET N-CH 1200V 3A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IXTA3N50D2 功能描述:MOSFET N-CH MOSFETS (D2) 500V 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA3N50P 功能描述:MOSFET 3.6 Amps 500 V 2 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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