| 型號(hào) | 廠商 | 描述 |
| ne521dr2g 2 3 4 5 6 7 |
ON SEMICONDUCTOR | High−Speed Dual−Differential Comparator/Sense Amp |
| ne521ng 2 3 4 5 6 7 |
ON SEMICONDUCTOR | High−Speed Dual−Differential Comparator/Sense Amp |
| ne5230dg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
ON SEMICONDUCTOR | Low Voltage Operational Amplifier |
| ne5500179a 2 3 4 5 6 7 8 9 10 11 |
NEC Corp. | SILICON POWER MOS FET |
| ne5500179a-t1 2 3 4 5 6 7 8 9 10 11 |
NEC Corp. | SILICON POWER MOS FET |
| ne5510179a 2 3 4 |
NEC Corp. | 3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS |
| ne5510179a-t1 2 3 4 |
NEC Corp. | 3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS |
| ne5511279a 2 3 |
NEC Corp. | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| ne5511279a-t1 2 3 |
NEC Corp. | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| ne5511279a-t1a 2 3 |
NEC Corp. | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| ne5517dg 2 3 4 5 6 7 8 9 10 11 12 13 14 |
ON SEMICONDUCTOR | Dual Operational Transconductance Amplifier |
| ne5517dr2 2 3 4 5 6 7 8 9 10 11 12 13 14 |
ON SEMICONDUCTOR | Dual Operational Transconductance Amplifier |
| ne5517ng 2 3 4 5 6 7 8 9 10 11 12 13 14 |
ON SEMICONDUCTOR | Dual Operational Transconductance Amplifier |
| ne5517ang 2 3 4 5 6 7 8 9 10 11 12 13 14 |
ON SEMICONDUCTOR | Dual Operational Transconductance Amplifier |
| ne5532ad8g 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | Internally Compensated Dual Low Noise Operational Amplifier |
| ne5532ad8r2 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | Internally Compensated Dual Low Noise Operational Amplifier |
| ne5532ad8r2g 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | Internally Compensated Dual Low Noise Operational Amplifier |
| ne5532ang 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | Internally Compensated Dual Low Noise Operational Amplifier |
| ne5532d8r2 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | Internally Compensated Dual Low Noise Operational Amplifier |
| ne5532d8r2g 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | Internally Compensated Dual Low Noise Operational Amplifier |
| ne5532dg 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | Internally Compensated Dual Low Noise Operational Amplifier |
| ne5532dr2 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | Internally Compensated Dual Low Noise Operational Amplifier |
| ne5532dr2g 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | Internally Compensated Dual Low Noise Operational Amplifier |
| ne5532ng 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | Internally Compensated Dual Low Noise Operational Amplifier |
| ne555 2 3 4 5 |
永盛國際集團(tuán) | Precision Timer |
| ne555 2 3 4 5 |
Harris Corporation | Timers for Timing Delays and Oscillator Application in Commercial, Industrial and Military Equipment |
| ne555dr 2 3 4 5 |
NEC Corp. | PRECISION TIMERS |
| ne555psr 2 3 4 5 |
NEC Corp. | PRECISION TIMERS |
| ne555pw 2 3 4 5 |
NEC Corp. | PRECISION TIMERS |
| ne555pwr 2 3 4 5 |
NEC Corp. | PRECISION TIMERS |
| ne555 2 3 4 5 |
NEC Corp. | NONLINEAR MODEL |
| ne555d 2 3 4 5 |
NEC Corp. | PRECISION TIMERS |
| ne555p 2 3 4 5 |
NEC Corp. | PRECISION TIMERS |
| ne555yd 2 3 4 5 |
Texas Instruments, Inc. | PRECISION TIMERS |
| ne555yp 2 3 4 5 |
Texas Instruments, Inc. | PRECISION TIMERS |
| ne555fk 2 3 4 5 |
Texas Instruments, Inc. | PRECISION TIMERS |
| ne555jg 2 3 4 5 |
Texas Instruments, Inc. | PRECISION TIMERS |
| ne555yfk 2 3 4 5 |
Texas Instruments, Inc. | PRECISION TIMERS |
| ne555 2 3 4 5 |
Fairchild Semiconductor Corporation | Single Timer |
| ne555d 2 3 4 5 |
FAIRCHILD SEMICONDUCTOR CORP | Single Timer |
| ne555n 2 3 4 5 |
FAIRCHILD SEMICONDUCTOR CORP | Single Timer |
| ne650r279a-t1 2 3 4 5 6 7 8 |
NEC Corp. | 0.2 W L, S-BAND POWER GaAs MES FET |
| ne650r279a 2 3 4 5 6 7 8 |
NEC Corp. | 0.2 W L, S-BAND POWER GaAs MES FET |
| ne650r479a-t1 2 3 4 5 6 7 8 |
NEC Corp. | 0.4 W L, S-BAND POWER GaAs MES FET |
| ne650r479a 2 3 4 5 6 7 8 |
NEC Corp. | 0.4 W L, S-BAND POWER GaAs MES FET |
| ne6510379a-t1 2 3 4 5 6 7 8 |
NEC Corp. | 3 W L-BAND POWER GaAs HJ-FET |
| ne6510379a 2 3 4 5 6 7 8 |
NEC Corp. | 3 W L-BAND POWER GaAs HJ-FET |
| ne651r479a 2 3 4 5 6 7 8 |
NEC Corp. | 0.4 W L-BAND POWER GaAs HJ-FET |
| ne651r479a-t1 2 3 4 5 6 7 8 |
NEC Corp. | 0.4 W L-BAND POWER GaAs HJ-FET |
| ne678m04 2 3 4 5 6 7 |
NEC Corp. | MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR |