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參數(shù)資料
| 型號： | NE650R479A-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | 0.4 W L, S-BAND POWER GaAs MES FET |
| 中文描述： | 0.4冊，S波段功率GaAs場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 79K |
| 代理商： | NE650R479A-T1 |
The information in this document is subject to change without notice.
N-CHANNEL GaAs MES FET
NE650R479A
0.4 W L, S-BAND POWER GaAs MES FET
1998
Document No. P13671EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
DESCRIPTION
The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile
communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high
linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
High Output Power
High Linear Gain
High Power Added Efficiency: 45% typ. @V
DS
= 6 V, I
Dset
= 100 mA, f = 1.9 GHz
: P
O (1 dB)
= +26 dBm typ.
: 14 dB typ.
ORDERING INFORMATION (PLAN)
Part Number
Package
Supplying Form
NE650R479A-T1
79A
12 mm tape width, 1 kpcs/reel
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE650R479A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
15
V
Gate to Source Voltage
V
GSO
–7
V
Drain Current
I
D
0.6
A
Gate Forward Current
I
GF
12
mA
Gate Reverse Current
I
GR
12
mA
Total Power Dissipation
P
T
2.5
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–65 to +150
°C
Caution
Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE650R479A | 0.4 W L, S-BAND POWER GaAs MES FET |
| NE6510379A-T1 | 3 W L-BAND POWER GaAs HJ-FET |
| NE6510379A | 3 W L-BAND POWER GaAs HJ-FET |
| NE651R479A | 0.4 W L-BAND POWER GaAs HJ-FET |
| NE651R479A-T1 | 0.4 W L-BAND POWER GaAs HJ-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE650R479A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR MESFET 制造商:Renesas 功能描述:Trans MOSFET N-CH 15V 0.6A 4-Pin Case 79A T/R |
| NE6510179 | 制造商:CEL 制造商全稱:CEL 功能描述:NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET |
| NE6510179A | 功能描述:射頻GaAs晶體管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE6510179A-A | 功能描述:射頻GaAs晶體管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE6510179A-EVPW19 | 功能描述:射頻GaAs晶體管 For NE6510179A-A Power at 1.9 GHz RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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