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參數資料
| 型號： | NE6510379A-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | 3 W L-BAND POWER GaAs HJ-FET |
| 中文描述： | 3瓦L波段功率GaAs黃建忠場效應管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 97K |
| 代理商： | NE6510379A-T1 |
The information in this document is subject to change without notice.
N-CHANNEL GaAs HJ-FET
NE6510379A
3 W L-BAND POWER GaAs HJ-FET
1998
Document No. P13677EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
DESCRIPTION
The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear
gain, high efficiency and excellent distortion.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
GaAs HJ-FET Structure
High Output Power
:
P
O
= +35 dBm typ. @V
DS
= 3.5 V, I
Dset
= 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty
P
O
= +32.5 dBm typ. @V
DS
= 3.5 V, I
Dset
= 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty
: G
L
= 13 dB typ. @V
DS
= 3.5 V, I
Dset
= 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty
G
L
= 8 dB typ. @V
DS
= 3.5 V, I
Dset
= 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty
High Power Added Efficiency: 58% typ. @V
DS
= 3.5 V, I
Dset
= 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty
52% typ. @V
DS
= 3.5 V, I
Dset
= 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty
High Linear Gain
ORDERING INFORMATION (PLAN)
Part Number
Package
Supplying Form
NE6510379A-T1
79A
12 mm tape width, 1 kpcs/reel
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE6510379A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
6
V
Gate to Source Voltage
V
GSO
–4
V
Drain Current
I
D
4.2
A
Gate Forward Current
I
GF
38
mA
Gate Reverse Current
I
GR
38
mA
Total Power Dissipation
P
T
18
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–65 to +150
°C
Caution
Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NE651R479A | 功能描述:射頻GaAs晶體管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE651R479A-A | 功能描述:射頻GaAs晶體管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE651R479A-EVPW19 | 功能描述:射頻GaAs晶體管 For NE651R479A-A Power at 1.9 GHz RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE651R479A-EVPW24 | 功能描述:射頻GaAs晶體管 For NE651R479A-A Power at 2.4 GHz RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE651R479A-EVPW26 | 功能描述:射頻GaAs晶體管 For NE651R479A-A Power at 2.6 GHz RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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