參數(shù)資料
型號(hào)： NE5517DG
廠商： ON SEMICONDUCTOR
元件分類： 運(yùn)算放大器
英文描述： Dual Operational Transconductance Amplifier
中文描述： DUAL OP-AMP, 5000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDSO16
封裝： LEAD FREE, SOIC-16
文件頁數(shù)： 8/14頁
文件大?。?/td> 194K
代理商： NE5517DG
NE5517, NE5517A, AU5517
http://onsemi.com
8
Linearizing Diodes
For V
IN
greater than a few millivolts, Equation 3 becomes
invalid and the transconductance increases non-linearly.
Figure 22 shows how the internal diodes can linearize the
transfer function of the operational amplifier. Assume D
2
and D
3
are biased with current sources and the input signal
current is I
S
. Since I
4
+ I
5
= I
B
and I
5
I
4
= I
0
,
that is: I
4
= (I
B
I
0
), I
5
= (I
B
+ I
0
)
+VS
I
D
I
B
I
5
Q
4
1/2I
D
I
S
I
S
1/2I
D
VS
I
4
I
5
D
3
D
2
ID
2
IS
ID
2
IS
I0
I5
I4
I0
2 IS
IB
ID
Figure 22. Linearizing Diode
For the diodes and the input transistors that have identical
geometries and are subject to similar voltages and
temperatures, the following equation is true:
T
ID
2
ID
2
I
S
I
S
KT
q
In1 2(I
B
1 2(I
B
I
O
)
I
O
)
(eq. 6)
I
O
I
S
2
I
B
I
D
for |I
S
|
I
D
2
The only limitation is that the signal current should not
exceed I
D
.
Impedance Buffer
The upper limit of transconductance is defined by the
maximum value of I
B
(2.0 mA). The lowest value of I
B
for
which the amplifier will function therefore determines the
overall dynamic range. At low values of I
B
, a buffer with
very low input bias current is desired. A Darlington
amplifier with constant-current source (Q
14
, Q
15
, Q
16
, D
7
,
D
8
, and R
1
) suits the need.
APPLICATIONS
Voltage-Controlled Amplifier
In Figure 23, the voltage divider R
2
, R
3
divides the
input-voltage into small values (mV range) so the amplifier
operates in a linear manner.
It is:
I
OUT
V
IN
R
3
R
2
R
3
g
M
;
V
OUT
I
OUT
R
L
;
A
V
OUT
V
IN
R
3
R
2
R
3
g
M
R
L
(3) g
M
= 19.2 I
ABC
(g
M
in mhos for I
ABC
in mA)
Since g
M
is directly proportional to I
ABC
, the amplification
is controlled by the voltage V
C
in a simple way.
When V
C
is taken relative to V
CC
the following formula
is valid:
I
ABC
(V
C
1.2V)
R
1
The 1.2 V is the voltage across two base-emitter baths in
the current mirrors. This circuit is the base for many
applications of the AU5517/NE5517.
4
6
3
+
NE5517
5
11
1
7
8
V
IN
R
4
= R
2
/ /R
3
+V
CC
V
C
R
2
R
3
R
1
R
L
R
S
+V
CC
INT
V
OUT
V
CC
I
OUT
I
ABC
TYPICAL VALUES: R
1
= 47k
R
2
= 10k
R
3
= 200
R
4
= 200
R
L
= 100k
R
S
= 47k
INT
Figure 23.
相關(guān)PDF資料
PDF描述
NE5517DR2 Dual Operational Transconductance Amplifier
NE5517NG Dual Operational Transconductance Amplifier
NE5517ANG Dual Operational Transconductance Amplifier
NE5532AD8G Internally Compensated Dual Low Noise Operational Amplifier
NE5532AD8R2 Internally Compensated Dual Low Noise Operational Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE5517DR2 功能描述:跨導(dǎo)放大器 Transconductance RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 封裝 / 箱體:SOIC-14 帶寬: 輸入補(bǔ)償電壓:40 mV at +/- 5 V 電源電壓-最大:+/- 5 V 電源電流: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube
NE5517DR2G 功能描述:跨導(dǎo)放大器 Transconductance Dual Commercial Temp RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 封裝 / 箱體:SOIC-14 帶寬: 輸入補(bǔ)償電壓:40 mV at +/- 5 V 電源電壓-最大:+/- 5 V 電源電流: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube
NE5517D-T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Transconductance Operational Amplifier
NE5517N 功能描述:跨導(dǎo)放大器 Transconductance RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 封裝 / 箱體:SOIC-14 帶寬: 輸入補(bǔ)償電壓:40 mV at +/- 5 V 電源電壓-最大:+/- 5 V 電源電流: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube
NE5517NG 功能描述:跨導(dǎo)放大器 Transconductance Dual Commercial Temp RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 封裝 / 箱體:SOIC-14 帶寬: 輸入補(bǔ)償電壓:40 mV at +/- 5 V 電源電壓-最大:+/- 5 V 電源電流: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube
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