參數(shù)資料
型號(hào)： NE5517DG
廠商： ON SEMICONDUCTOR
元件分類： 運(yùn)算放大器
英文描述： Dual Operational Transconductance Amplifier
中文描述： DUAL OP-AMP, 5000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDSO16
封裝： LEAD FREE, SOIC-16
文件頁(yè)數(shù)： 7/14頁(yè)
文件大?。?/td> 194K
代理商： NE5517DG
NE5517, NE5517A, AU5517
http://onsemi.com
7
APPLICATIONS
4, 13
2, 15
3, 14
+
NE5517
11
6
5, 12
1, 16
+15V
15V
7, 10
8, 9
INPUT
OUTPUT
390pF
15V
51
0.01
F
0.001
F
0.01
F
Figure 20. Unity Gain Follower
10k
1.3k
10k
62k
5k
CIRCUIT DESCRIPTION
The circuit schematic diagram of one-half of the
AU5517/NE5517, a dual operational transconductance
amplifier with linearizing diodes and impedance buffers, is
shown in Figure 21.
Transconductance Amplifier
The transistor pair, Q
4
and Q
5
, forms a transconductance
stage. The ratio of their collector currents (I
4
and I
5
,
respectively) is defined by the differential input voltage, V
IN
,
which is shown in Equation 1.
KT
V
IN
q
In
I
5
I
4
(eq. 1)
Where V
IN
is the difference of the two input voltages
KT
26 mV at room temperature (300
°
k).
Transistors Q
1
, Q
2
and diode D
1
form a current mirror which
focuses the sum of current I
4
and I
5
to be equal to amplifier bias
current I
B
:
I
4
I
5
I
B
(eq. 2)
If V
IN
is small, the ratio of I
5
and I
4
will approach unity and
the Taylor series of In function can be approximated as
InI
5
I
4
and I
4
5
I
4
1 2I
B
KT
q
KT
q
I
5
I
4
I
4
I
B
I
5
(eq. 3)
I
5
qInI
KT
q
I
5
I
4
2KT
q
I
4
I
B
V
IN
(eq. 4)
I
5
I
4
V
IN
I
B
2KT
q
The remaining transistors (Q
6
to Q
11
) and diodes (D
4
to D
6
)
form three current mirrors that produce an output current equal
to I
5
minus I
4
. Thus:
q
2KT
q
2KT
is then the transconductance of the amplifier
and is proportional to I
B
.
V
IN
I
B
I
O
(eq. 5)
The term
I
B
V+
11
D4
Q6
Q7
2,15
D2
Q4
Q5
D3
INPUT
4,13
+INPUT
AMP BIAS
INPUT
1,16
Q2
Q1
D1
V
6
Q10
D6
Q11
VOUTPUT
5,12
Q9
Q8
D5
Q14
Q15
Q16
R1
D7
D8
Q3
7,10
Q12
Q13
8,9
Figure 21. Circuit Diagram of NE5517
相關(guān)PDF資料
PDF描述
NE5517DR2 Dual Operational Transconductance Amplifier
NE5517NG Dual Operational Transconductance Amplifier
NE5517ANG Dual Operational Transconductance Amplifier
NE5532AD8G Internally Compensated Dual Low Noise Operational Amplifier
NE5532AD8R2 Internally Compensated Dual Low Noise Operational Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE5517DR2 功能描述:跨導(dǎo)放大器 Transconductance RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 封裝 / 箱體:SOIC-14 帶寬: 輸入補(bǔ)償電壓:40 mV at +/- 5 V 電源電壓-最大:+/- 5 V 電源電流: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube
NE5517DR2G 功能描述:跨導(dǎo)放大器 Transconductance Dual Commercial Temp RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 封裝 / 箱體:SOIC-14 帶寬: 輸入補(bǔ)償電壓:40 mV at +/- 5 V 電源電壓-最大:+/- 5 V 電源電流: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube
NE5517D-T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Transconductance Operational Amplifier
NE5517N 功能描述:跨導(dǎo)放大器 Transconductance RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 封裝 / 箱體:SOIC-14 帶寬: 輸入補(bǔ)償電壓:40 mV at +/- 5 V 電源電壓-最大:+/- 5 V 電源電流: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube
NE5517NG 功能描述:跨導(dǎo)放大器 Transconductance Dual Commercial Temp RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 封裝 / 箱體:SOIC-14 帶寬: 輸入補(bǔ)償電壓:40 mV at +/- 5 V 電源電壓-最大:+/- 5 V 電源電流: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube
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