參數(shù)資料
型號: NE5517DR2
廠商: ON SEMICONDUCTOR
元件分類: 運算放大器
英文描述: Dual Operational Transconductance Amplifier
中文描述: DUAL OP-AMP, 5000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDSO16
封裝: SOIC-16
文件頁數(shù): 14/14頁
文件大?。?/td> 194K
代理商: NE5517DR2
NE5517, NE5517A, AU5517
http://onsemi.com
14
PACKAGE DIMENSIONS
SOIC16
CASE 751B05
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
1
8
16
9
SEATING
PLANE
F
J
M
R
X 45
G
8 PL
P
B
A
M
0.25 (0.010)
B
S
T
D
K
C
16 PL
S
B
M
0.25 (0.010)
A
S
T
DIM
A
B
C
D
F
G
J
K
M
P
R
MIN
9.80
3.80
1.35
0.35
0.40
1.27 BSC
0.19
0.10
0
5.80
0.25
MAX
10.00
4.00
1.75
0.49
1.25
MIN
0.386
0.150
0.054
0.014
0.016
0.050 BSC
0.008
0.004
0
0.229
0.010
MAX
0.393
0.157
0.068
0.019
0.049
INCHES
MILLIMETERS
0.25
0.25
7
6.20
0.50
0.009
0.009
7
0.244
0.019
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE
MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
A
B
F
C
S
H
G
D
J
L
M
16 PL
SEATING
1
8
9
16
K
T
M
A
M
0.25 (0.010)
T
DIM
A
B
C
D
F
G
H
J
K
L
M
S
MIN
0.740
0.250
0.145
0.015
0.040
0.100 BSC
0.050 BSC
0.008
0.110
0.295
0
0.020
MAX
0.770
0.270
0.175
0.021
0.70
MIN
18.80
6.35
3.69
0.39
1.02
2.54 BSC
1.27 BSC
0.21
2.80
7.50
0
0.51
MAX
19.55
6.85
4.44
0.53
1.77
MILLIMETERS
INCHES
0.015
0.130
0.305
10
0.040
0.38
3.30
7.74
10
1.01
PDIP16
CASE 64808
ISSUE T
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