參數(shù)資料
型號: NE650R279A
廠商: NEC Corp.
英文描述: 0.2 W L, S-BAND POWER GaAs MES FET
中文描述: 0.2冊,S波段功率GaAs場效應晶體管
文件頁數(shù): 3/8頁
文件大?。?/td> 77K
代理商: NE650R279A
Preliminary Data Sheet
3
NE650R279A
NE650R279A S-PARAMETERS TEST CONDITIONS: V
DS
= 6.0 V, I
Dset
= 50 mA (Preliminary Data)
S
11
S
21
S
12
S
22
freq. (MHz)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
0.865
0.861
0.850
0.839
0.833
0.827
0.817
0.809
0.806
0.795
0.789
0.781
0.778
0.779
0.778
0.778
0.781
–103.4
–108.0
–112.1
–116.0
–120.5
–124.9
–129.4
–133.1
–137.7
–143.0
–148.3
–153.4
–157.5
–162.9
–167.0
–172.1
–176.7
5.788
5.593
5.439
5.182
5.026
4.992
4.888
4.739
4.628
4.518
4.403
4.383
4.348
4.065
3.910
3.763
3.632
133.2
131.9
130.8
129.1
129.1
128.4
125.6
124.9
123.6
121.8
119.9
118.2
116.6
115.8
113.8
113.1
112.8
0.070
0.072
0.073
0.075
0.078
0.081
0.082
0.082
0.081
0.081
0.083
0.086
0.087
0.087
0.085
0.084
0.083
53.2
51.5
51.1
50.9
50.6
49.2
47.2
45.8
45.6
46.2
46.5
46.0
44.3
42.7
42.2
42.1
41.4
0.403
0.397
0.392
0.387
0.382
0.376
0.368
0.360
0.349
0.336
0.325
0.311
0.300
0.288
0.276
0.264
0.256
–73.5
–76.7
–79.2
–82.1
–84.9
–87.5
–90.2
–93.0
–95.7
–98.5
–101.6
–104.9
–107.6
–110.5
–113.5
–117.3
–121.0
相關PDF資料
PDF描述
NE650R479A-T1 0.4 W L, S-BAND POWER GaAs MES FET
NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET
NE6510379A-T1 3 W L-BAND POWER GaAs HJ-FET
NE6510379A 3 W L-BAND POWER GaAs HJ-FET
NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET
相關代理商/技術參數(shù)
參數(shù)描述
NE650R279A-T1 制造商:NEC 制造商全稱:NEC 功能描述:0.2 W L, S-BAND POWER GaAs MES FET
NE650R479A 制造商:NEC 制造商全稱:NEC 功能描述:0.4 W L, S-BAND POWER GaAs MES FET
NE650R479A-T1 制造商:NEC 制造商全稱:NEC 功能描述:0.4 W L, S-BAND POWER GaAs MES FET
NE650R479A-T1-A 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR MESFET 制造商:Renesas 功能描述:Trans MOSFET N-CH 15V 0.6A 4-Pin Case 79A T/R
NE6510179 制造商:CEL 制造商全稱:CEL 功能描述:NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET