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參數(shù)資料
| 型號(hào)： | NE650R279A |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | 0.2 W L, S-BAND POWER GaAs MES FET |
| 中文描述： | 0.2冊(cè)，S波段功率GaAs場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 77K |
| 代理商： | NE650R279A |
Preliminary Data Sheet
2
NE650R279A
RECOMMENDED OPERATING LIMITS
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
6.0
6.0
V
Gain Compression
Gcomp
3.0
dB
Channel Temperature
T
ch
+125
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, Unless otherwise specified, using NEC standard test fixture.)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturated Drain Current
I
DSS
V
DS
= 2.5 V, V
GS
= 0 V
150
mA
Pinch-off Voltage
V
p
V
DS
= 2.5 V, I
D
= 1 mA
–2.5
–0.5
V
Gate to Drain Break Down
Voltage
BV
gd
I
gd
= 1 mA
13
V
Thermal Resistance
R
th
Channel to Case
40
60
°C/W
Output Power at 1 dB Gain
Compression Point
P
O (1 dB)
23.0
dBm
Drain Current
I
D
72
mA
Power Added Efficiency
η
add
45
%
Linear Gain
Note 1
G
L
f = 1.9 GHz, V
DS
= 6.0 V
R
g
= 30
I
Dset
= 50 mA (RF OFF)
Note 2
15.0
16.0
dB
Notes 1.
Pin = 0 dBm
2.
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NE650R279A-T1 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:0.2 W L, S-BAND POWER GaAs MES FET |
| NE650R479A | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:0.4 W L, S-BAND POWER GaAs MES FET |
| NE650R479A-T1 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:0.4 W L, S-BAND POWER GaAs MES FET |
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| NE6510179 | 制造商:CEL 制造商全稱(chēng):CEL 功能描述:NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET |
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