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參數(shù)資料
| 型號(hào)： | NE5511279A-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| 中文描述： | 鄰舍7.5 V UHF頻段射頻功率硅勞工處場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 99K |
| 代理商： | NE5511279A-T1 |
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods
and conditions other than those recommended below, contact your nearby sales of
fi
ce.
NE5511279A
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Re
fl
ow
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220
°
C or higher
Preheating time at 120 to 180
°
C
Maximum number of re
fl
ow processes
Maximum chlorine content of rosin
fl
ux (% mass)
: 260
°
C or below
: 10 seconds or less
: 60 seconds or less
: 120
±
30 seconds
: 3 times
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
Time at temperature of 200
°
C or higher
Preheating time at 120 to 150
°
C
Maximum number of re
fl
ow processes
Maximum chlorine content of rosin
fl
ux (% mass)
: 215
°
C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
Time at peak temperature
Preheating temperature (package surface temperature) : 120
°
C or below
Maximum number of
fl
ow processes
Maximum chlorine content of rosin
fl
ux (% mass)
: 260
°
C or below
: 10 seconds or less
: 1 time
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
Soldering time (per pin of device)
Maximum chlorine content of rosin
fl
ux (% mass)
: 350
°
C or below
: 3 seconds or less
: 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
08/26/2003
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE5511279A-T1A | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| NE5517DG | Dual Operational Transconductance Amplifier |
| NE5517DR2 | Dual Operational Transconductance Amplifier |
| NE5517NG | Dual Operational Transconductance Amplifier |
| NE5517ANG | Dual Operational Transconductance Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE5511279A-T1A | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R 制造商:California Eastern Laboratories 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R |
| NE5511279A-T1-A | 功能描述:射頻MOSFET電源晶體管 UHF Band RF Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| NE5511279A-T1A-A | 制造商:CEL 制造商全稱:CEL 功能描述:7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| NE5512 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual high-performance operational amplifier |
| NE5512D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual high-performance operational amplifier |
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