參數(shù)資料
型號(hào)： NE5510179A
廠商： NEC Corp.
英文描述： 3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
中文描述： 3.5V的操作硅射頻功率MOSFET為1.9 GHz的輸電功放
文件頁(yè)數(shù)： 4/4頁(yè)
文件大?。?/td> 39K
代理商： NE5510179A
NE5510179A
TYPICAL SCATTERING PARAMETERS
1
(T
A
= 25
°
C)
Note:
1. This file and many other s-parameter files can be downloaded from www.cel.com
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
MAG
0.83
0.80
0.80
0.81
0.82
0.82
0.83
0.85
0.85
0.86
0.87
0.88
0.88
0.89
0.89
0.90
0.90
0.91
0.90
0.91
0.91
0.91
0.92
0.91
0.91
0.92
0.91
0.92
0.92
0.92
ANG
-121.10
-148.10
-158.20
-163.40
-166.80
-169.40
-171.40
-173.40
-175.00
-176.70
-178.40
180.00
178.00
176.50
174.90
172.90
170.90
169.30
167.00
165.10
162.20
160.80
158.30
156.10
153.50
151.50
149.10
147.10
145.00
142.90
MAG
13.84
7.49
4.96
3.67
2.90
2.32
1.96
1.63
1.43
1.23
1.10
0.96
0.86
0.78
0.71
0.65
0.57
0.54
0.49
0.47
0.42
0.39
0.35
0.35
0.31
0.30
0.26
0.27
0.24
0.24
ANG
111.30
93.60
84.60
77.10
71.20
66.20
61.70
57.30
52.60
50.30
46.20
44.30
39.90
38.10
34.20
33.30
29.90
27.10
24.40
23.80
20.50
19.10
15.20
13.40
13.00
12.20
9.50
4.80
6.40
4.80
MAG
0.03
0.03
0.03
0.03
0.03
0.02
0.02
0.02
0.02
0.02
0.02
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.01
0.00
0.01
ANG
23.50
6.70
-2.60
-8.30
-13.30
-17.20
-18.30
-22.70
-24.60
-24.60
-29.30
-27.90
-28.10
-29.10
-31.70
-35.20
-28.20
-23.90
-23.00
-15.10
-3.70
-4.10
6.00
13.90
15.10
31.80
45.00
48.10
62.00
57.70
MAG
0.65
0.71
0.74
0.75
0.77
0.79
0.80
0.81
0.83
0.84
0.85
0.86
0.87
0.88
0.88
0.89
0.89
0.90
0.90
0.91
0.90
0.91
0.92
0.92
0.92
0.92
0.91
0.94
0.92
0.93
ANG
-154.00
-164.80
-168.50
-170.50
-171.60
-172.70
-173.40
-174.60
-175.50
-176.70
-177.50
-178.90
179.80
178.40
177.60
175.80
174.70
172.50
171.20
169.50
167.80
166.00
163.50
162.00
160.60
157.90
155.70
153.50
152.40
150.20
(dB)
26.50
23.60
21.80
20.60
19.60
19.00
18.60
18.00
17.80
17.30
17.20
17.00
16.80
16.60
16.20
13.50
11.40
12.20
10.50
11.10
8.60
8.50
7.90
8.30
7.00
6.60
5.00
7.60
5.30
6.60
-0.13
-0.12
-0.04
0.07
0.10
0.24
0.34
0.38
0.50
0.59
0.61
0.83
0.90
0.91
0.89
1.27
1.75
1.66
2.29
1.98
4.25
4.63
4.77
3.34
5.26
4.70
5.87
2.45
4.02
2.75
NE5510179A
V
DS
= 3.5 V, I
DS
= 200 mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
–
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
Headquarters
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
(408) 988-3500
Telex 34-6393
FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only)
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
07/05/2000
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE5510179A-T1 制造商:CEL 制造商全稱:CEL 功能描述:3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
NE5510279A 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS
NE5510279A-T1 制造商:NEC 制造商全稱:NEC 功能描述:3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
NE5510279A-T1-A 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS
NE5511279A 功能描述:射頻MOSFET電源晶體管 RO 551-NE5511279A-A RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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