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參數(shù)資料
| 型號： | NE5511279A |
| 廠商： | NEC Corp. |
| 英文描述： | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| 中文描述： | 鄰舍7.5 V UHF頻段射頻功率硅勞工處場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 99K |
| 代理商： | NE5511279A |
NEC'
S
7.5 V UHF BAND
RF POWER SILICON LD-MOS FET
FEATURES
HIGH OUTPUT POWER:
P
out
= 40.0 dBm TYP., f = 900 MHz, V
DS
= 7.5 V,
P
out
= 40.5 dBm TYP., f = 460 MHz, V
DS
= 7.5 V,
HIGH POWER ADDED EFFICIENCY:
η
add
= 48% TYP., f = 900 MHz, V
DS
= 7.5 V,
η
add
= 50% TYP., f = 460 MHz, V
DS
= 7.5 V,
HIGH LINEAR GAIN:
G
L
= 15.0 dB TYP., f = 900 MHz, V
DS
= 7.5 V,
G
L
= 18.5 dB TYP., f = 460 MHz, V
DS
= 7.5 V,
SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
SINGLE SUPPLY:
V
DS
= 2.8 to 8.0 V
NE5511279A
DESCRIPTION
NEC's NE5511279A is an N-Channel silicon power laterally
dif used MOSFET spe cial y designed as the transmission
power ampli
fi
er for 7.5 V radio systems. Die are man u
fac ured us ng NEC's NEWMOS1 tech nol o gy and housed in
a surface mount pack age. This device can deliver 40.0 dBm
output power with 48% power added ef
fi
ciency at 900 MHz
using a 7.5 V supply voltage.
UHF RADIO SYSTEMS
CELLULAR REPEATERS
TWO-WAY RADIOS
FRS/GMRS
FIXED WIRELESS
APPLICATIONS
California Eastern Laboratories
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
TEST CONDITIONS
P
out
Output Power
38.5
40.0
dBm
f = 900 MHz, V
DS
= 7.5 V,
I
D
Drain Current
2.5
A
P
in
= 27 dBm,
η
add
Power Added Ef
fi
ciency
42
48
%
I
DSQ
= 400 mA (RF OFF)
G
L
Linear Gain
15.0
dB
P
in
= 5 dBm
P
out
Output Power
40.5
dBm
f = 460 MHz, V
DS
= 7.5 V,
I
D
Drain Current
2.75
A
P
in
= 25 dBm,
η
add
Power Added Ef
fi
ciency
50
%
I
DSQ
= 400 mA (RF OFF)
G
L
Linear Gain
18.5
dB
P
in
= 5 dBm
I
GSS
Gate to Source Leak Current
100
nA
V
GS
= 6.0 V
I
DSS
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
100
nA
V
DS
= 8.5 V
V
th
Gate Threshold Voltage
1.0
1.5
2.0
V
V
DS
= 4.8 V, I
DS
= 1.5 mA
R
th
Thermal Resistance
5
°
C/W
Channel to Case
g
m
Transconductance
2.3
S
V
DS
= 3.5 V, I
DS
= 900 mA
BV
DSS
Drain to Source Breakdown Voltage
20
24
V
I
DSS
= 15
μ
A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Notes:
DC performance is 100% tested. RF performance is tested on several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
0
0
(Bottom View)
3.6±0.2
1.5±0.2
0.8 MAX.
1
Source
Gate
Drain
0.4±0.15
5.7 MAX.
5
0
0
4
4.2 MAX.
Source
Gate
Drain
W
2
相關(guān)PDF資料 |
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| NE5511279A-T1 | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| NE5511279A-T1A | NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| NE5517DG | Dual Operational Transconductance Amplifier |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE5511279A-A | 功能描述:射頻MOSFET電源晶體管 UHF Band RF Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| NE5511279A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R |
| NE5511279A-T1A | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R 制造商:California Eastern Laboratories 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R |
| NE5511279A-T1-A | 功能描述:射頻MOSFET電源晶體管 UHF Band RF Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| NE5511279A-T1A-A | 制造商:CEL 制造商全稱:CEL 功能描述:7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
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