型號(hào) | 廠商 | 描述 |
irfbc30a 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) |
irfbc30s 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) |
irfbc40l 2 3 4 5 6 7 8 9 10 |
International Rectifier | CAP CER 1500PF 100V 20% X7R 0603 |
irfbc40s 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) |
irfbe30 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) |
irfbg20 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A) |
irfbg30 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A) |
irfbl3703 2 3 4 5 6 7 8 |
International Rectifier | Synchronous Rectification in High Power High Frequency DC/DC Converters |
irfc2907b |
International Rectifier | HEXFET Power MOSFET Die in Wafer Form |
irfp2907 |
International Rectifier | HEXFET Power MOSFET Die in Wafer Form |
irfc350 |
IXYS Corporation | N-Channel Enhancement Mode High Ruggedness Series |
irfd014 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A) |
irfd024 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A) |
irfd110 2 3 4 5 6 |
INTERSIL CORP | 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET |
irfd110 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) |
irfd1z0 2 3 4 5 6 |
HARRIS SEMICONDUCTOR | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
irfd1z1 2 3 4 5 6 |
HARRIS SEMICONDUCTOR | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
irfd1z2 2 3 4 5 6 |
HARRIS SEMICONDUCTOR | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
irfd1z3 2 3 4 5 6 |
HARRIS SEMICONDUCTOR | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
irfd214 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A) |
irfd224 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=0.63A) |
irfd310 2 3 4 5 6 |
HARRIS SEMICONDUCTOR | 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET |
irfd310 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A) |
irfd420 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=0.37A) |
irfd9020 2 3 4 5 6 |
International Rectifier | HEXFET TRANSISTORS P CHANNEL HEXDIP |
irfd9022 2 3 4 5 6 |
International Rectifier | HEXFET TRANSISTORS P CHANNEL HEXDIP |
irfd9120 2 3 4 5 6 |
INTERSIL CORP | 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET(1.0A, 100V, 0.6 Ω, P溝道功率MOS場效應(yīng)管) |
irfd9220 2 3 4 5 6 |
HARRIS SEMICONDUCTOR | 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET |
irfd9220 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A) |
irfe120 2 3 4 5 6 7 |
International Rectifier | HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
irfe430 2 3 4 5 6 7 8 |
International Rectifier | HEXFET TRANSISTOR |
irfe430 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Transistor(HEXFET 晶體管) |
irff110 2 3 4 5 6 7 |
HARRIS SEMICONDUCTOR | 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET(3.5A, 100V, 0.600 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
irff120 2 3 4 5 6 7 |
HARRIS SEMICONDUCTOR | 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET(6.0A, 100V , 0.300 Ohm, N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
irff120 2 3 4 5 6 7 |
International Rectifier | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
irff130 2 3 4 5 6 7 |
INTERSIL CORP | 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET(8.0A, 100V, 0.180 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
irff210 2 3 4 5 6 7 |
INTERSIL CORP | 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET |
irff210 2 3 4 5 6 7 |
International Rectifier | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF) |
irff230 2 3 4 5 6 7 |
HARRIS SEMICONDUCTOR | 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET |
irff310 2 3 4 5 6 7 |
HARRIS SEMICONDUCTOR | 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET(1.35A, 400V, 3.600 Ω, N溝道功率MOS場效應(yīng)管) |
irff310 2 3 4 5 6 7 |
International Rectifier | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF) |
irff330 2 3 4 5 6 7 |
INTERSIL CORP | 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET |
irff430 2 3 4 5 6 7 |
INTERSIL CORP | 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
irff430 2 3 4 5 6 7 |
International Rectifier | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
irff9024 2 3 4 5 6 7 |
International Rectifier | HEXFET TRANSISTORS |
irff9110 2 3 4 5 6 7 |
International Rectifier | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
irff9120 2 3 4 5 6 7 |
HARRIS SEMICONDUCTOR | 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET |
irff9130 2 3 4 5 6 7 |
INTERSIL CORP | -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET |
irff9130 2 3 4 5 6 7 |
International Rectifier | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) |
irff9210 2 3 4 5 6 7 |
International Rectifier | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |