參數(shù)資料
型號(hào): IRFD310
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A)
中文描述: 功率MOSFET(減振鋼板基本\u003d為400V,的Rds(on)\u003d 3.6ohm,身份證\u003d 0.35A)
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 50K
代理商: IRFD310
4-295
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
-
-
0.4
A
Pulse Source to Drain Current (Note 3)
-
-
1.6
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 1.6A, V
GS
= 0V (Figure 12)
T
J
= 150
o
C, I
SD
= 1.6A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= 1.6A, dI
SD
/dt = 100A/
μ
s
-
-
1.6
V
Reverse Recovery Time
-
380
-
ns
Reverse Recovery Charge
-
2.7
-
μ
C
NOTES:
2. Pulse test: pulse width
300
μ
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by Max junction temperature.
4. V
DD
= 40V, starting T
J
= 25
o
C, L = 44.89mH, R
G
= 50
,
peak I
AS
= 1.4A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. OUTPUT CHARACTERISTICS
G
D
S
T
A
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
0.4
0.3
0.1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
100
μ
s
1ms
10ms
DC
10
μ
s
T
J
= MAX RATED
SINGLE PULSE
5
1
0.1
00.1
0.0011
10
100
1000
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
I
D
,
0
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
40
60
80
0.44
0.88
1.32
1.76
2.20
100
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
V
GS
= 6V
V
GS
= 7V
V
GS
= 5V
V
GS
= 4V
IRFD310
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