參數(shù)資料
型號(hào)： IRFD9120
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET(1.0A, 100V, 0.6 Ω, P溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： Si, SMALL SIGNAL, FET
封裝： HEXDIP-4
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 52K
代理商： IRFD9120
4-45
File Number
2285.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFD9120
1.0A, 100V 0.6 Ohm, P-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
P-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. These types
can be operated directly from integrated circuits.
Formerly developmental type TA17501.
Features
1.0A, 100V
r
DS(ON)
= 0.6
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Symbol
Packaging
HEXDIP
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD9120
HEXDIP
IRFD9120
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
GATE
DRAIN
Data Sheet
July 1999
相關(guān)PDF資料
PDF描述
IRFD9220 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET
IRFD9220 Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)
IRFE120 HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
irfe430 HEXFET TRANSISTOR
IRFE430 HEXFET Transistor(HEXFET 晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFD9120PBF 功能描述:MOSFET P-Chan 100V 1.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFD9120R4602 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFD9123 功能描述:MOSFET P-Chan 100V 1.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFD9123PBF 功能描述:MOSFET 60 Volt 1.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFD9210 功能描述:MOSFET P-Chan 200V 0.4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*