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參數(shù)資料
| 型號： | IRFD9120 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET(1.0A, 100V, 0.6 Ω, P溝道功率MOS場效應(yīng)管) |
| 中文描述： | Si, SMALL SIGNAL, FET |
| 封裝： | HEXDIP-4 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 52K |
| 代理商： | IRFD9120 |
4-47
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
ModifiedMOSFETSymbol
Showing the Integral
Reverse P-N Junction
Diode
-
-
-1.0
A
Pulse Source to Drain Current
(Note 3)
-
-
-8.0
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
C
= 25
o
C, I
SD
= -1.0A, V
GS
= 0V, (Figure 12)
T
J
= 150
o
C, I
SD
= -4.0A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= -4.0A, dI
SD
/dt = 100A/
μ
s
-
-
-1.5
V
Reverse Recovery Time
-
150
-
ns
Reverse Recovery Charge
-
0.9
-
μ
C
NOTES:
2. Pulse test: pulse width
≤
80
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 555mH, R
G
= 25
,
Peak I
AS
= 1.0A (Figures 14, 15).
G
D
S
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. OUTPUT CHARACTERISTICS
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
50
100
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
150
25
75
125
-1.0
-0.8
-0.6
-0.4
-0.2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
I
D
,
10
100
0.1
10
1
0.01
10
μ
s
100
μ
s
1ms
10ms
100ms
DC
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
OPERATION IN THIS AREA
IS LIMITED BY r
DS(ON)
I
D
,
0
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-1
-2
-3
-4
-5
-50
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
0
V
GS
= -10V
IRFD9120
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