參數(shù)資料
型號(hào): IRFD110
廠商: INTERSIL CORP
元件分類: 小信號(hào)晶體管
英文描述: 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET
中文描述: 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: HEXDIP-4
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 52K
代理商: IRFD110
4-271
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
-
-
1.0
A
Pulse Source to Drain Current (Note 4)
-
-
8.0
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 1.0A, V
GS
= 0V (Figure 12)
T
J
= 150
o
C, I
SD
= 1.0A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= 1.0A, dI
SD
/dt = 100A/
μ
s
-
-
2.5
V
Reverse Recovery Time
-
100
-
ns
Reverse Recovery Charge
-
0.2
-
μ
C
NOTES:
2. Pulse test: pulse width
300
μ
s, duty cycle
2%.
3. V
DD
= 25V, starting T
J
= 25
o
C, L = 28.5mH, R
G
= 25
,
peak I
AS
= 1.0A.
4. Repetitive rating: pulse width limited by maximum junction temperature.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. OUTPUT CHARACTERISTICS
G
D
S
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
T
A
, AMBIENT TEMPERATURE (
o
C)
50
75
100
25
150
1.0
0.8
0.6
0
0.4
I
D
D
0.2
125
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
I
D
,
100
0.1
10
1
0.01
1ms
10ms
100ms
100
μ
s
LIMITED BY r
DS(ON)
AREA MAY BE
DC
10
T
J
= MAX RATED
I
D
,
0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
30
40
1
2
3
4
5
50
0
V
GS
= 4V
V
GS
= 5V
V
GS
= 7V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
GS
= 9V
V
GS
= 8V
V
GS
= 6V
IRFD110
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