參數(shù)資料
型號： IRFF9120
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET
中文描述： 4 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù)： 2/7頁
文件大小： 59K
代理商： IRFF9120
4-95
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFF9120
-100
-100
-4
-16
±
20
20
0.16
370
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current, T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation, (Figure 14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor (Figure 14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
VD
S
= VG
S
, I
D
= 250
μ
A
V
DS
= Max Rating, V
GS
= 0V
V
DS
= Max Rating x 0.8, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= -10V
VG
S
= -20V
V
GS
= 20V
V
GS
= 10V, I
D
= -2A
V
DS
> I
D(ON)
x r
DS(ON) Max
, I
D
= 2A
V
DD
0.5BV
DSS
, I
D
=
4A, R
G
= 9.1
(Figure 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
-100
-
-
V
Gate Threshold Voltage
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
-
-
-250
μ
A
-
-
-1000
μ
A
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
IG
SS
r
DS(ON)
g
fs
t
D(ON)
t
r
t
D(OFF)
t
f
Q
G(TOT)
-4
-
-
A
Gate to Source Leakage Forward
-
-
-100
nA
Gate to Source Leakage Reverse
-
-
100
nA
Drain to Source On-State Resistance (Note 2)
-
0.5
0.6
Forward Transconductance (Note 2)
1.25
2
-
S
Turn-On Delay Time
-
25
50
ns
Rise Time
-
50
100
ns
Turn-Off Delay Time
-
50
100
ns
Fall Time
-
50
100
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= 10V, I
D
= 4A, V
DS
= 0.8 Max BV
DSS
(See Figure 18 for Test Circuit) Gate Charge
is Essentially Independent of Operating
Temperature
-
16
22
nC
Gate to Source Charge
Q
GS
Q
GD
C
ISS
C
OSS
C
RSS
L
D
-
9
-
nC
Gate to Drain “Miller” Charge
-
7
-
nC
Input Capacitance
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz,
See Figure 10
-
300
-
pF
Output Capacitance
-
200
-
pF
Reverse Transfer Capacitance
-
50
-
pF
Internal Drain Inductance
Measured from the
Drain Lead, 5.0mm
(0.2in) From Header
to Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the
Source Lead, 5.0mm
(0.2in) from Header to
Source Bonding Pad
-
15
-
nH
Junction to Case
R
θ
JC
R
θ
JA
-
-
6.25
o
C/W
o
C/W
Junction to Ambient
Typical Socket Mount
-
-
175
G
D
S
IRFF9120
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFF9121 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-205AF
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IRFF9130 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.5A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:Single P-Channel 100 V 25 W 34.8 Hexfet Transistor Through Hole - TO-39 制造商:International Rectifier 功能描述:P CH MOSFET, -100V, 6.5A, TO-205AF; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.5A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V ;RoHS Compliant: No 制造商:Int'L Rectifier 功能描述:Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 制造商:IR 功能描述:Single P-Channel 100 V 25 W 34.8 Hexfet Transistor Through Hole - TO-39
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