參數(shù)資料
型號: IRFF310
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET(1.35A, 400V, 3.600 Ω, N溝道功率MOS場效應(yīng)管)
中文描述: 1.35 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 5/7頁
文件大?。?/td> 326K
代理商: IRFF310
5
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
1.05
0.85
0
T
J
, JUNCTION TEMPERATURE (
o
C)
160
N
I
D
= 250
μ
A
1.15
0.95
0.75
-40
40
80
120
B
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
300
200
100
0
C
ISS
C
OSS
C
RSS
10
20
30
40
50
400
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
I
D
, DRAIN CURRENT (A)
2
4
6
8
0
10
2.0
1.6
1.2
0
0.8
g
f
,
0.4
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
2.4
80
μ
s PULSE TEST
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
1
0.1
0
1
2
3
4
5
T
J
= 175
o
C
T
J
= 25
o
C
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
2
4
6
8
0
10
20
15
10
0
5
V
G
,
I
D
= 4A
V
DS
= 100V
V
DS
= 40V
V
DS
= 160V
IRFF310
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