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參數(shù)資料
| 型號： | IRFF130 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET(8.0A, 100V, 0.180 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| 中文描述： | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 325K |
| 代理商： | IRFF130 |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFF130
100
100
8.0
32
±
20
25
0.2
69
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation, T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±
20V
I
D
= 4.0A, V
GS
= 10V (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 4.0A (Figure 12)
V
DD
0.5 x Rated BV
DSS
, I
D
≈
8.0A, R
G
= 9.1
,
V
GS
= 10V, R
L
= 6.1
For V
DSS
= 50V,
R
L
= 4.9
For V
DSS
= 40 (Figures 17, 18) MOSFET
Switching Times are Essentially Independent of
Operating Temperature
100
-
-
V
Gate Threshold Voltage
2.0
-
4.0
V
Zero Gate Voltage Drain Current
-
-
25
μ
A
μ
A
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
8.0
-
-
A
Gate to Source Leakage Current
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
0.14
0.180
Forward Transconductance (Note 2)
4.0
5.5
-
S
Turn-On Delay Time
-
30
50
ns
Rise Time
-
80
150
ns
Turn-Off Delay Time
-
50
100
ns
Fall Time
-
80
150
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= 10V, I
D
= 8.0A, V
DS
= 0.8 x Rated BV
DSS
(Figures 14, 19, 20) Gate Charge is Essentially
Independent of Operating Temperature
-
18
30
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
9.0
-
nC
Gate to Drain “Miller” Charge
-
9.0
-
nC
Input Capacitance
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
-
600
-
pF
Output Capacitance
-
300
-
pF
Reverse Transfer Capacitance
-
100
-
pF
Internal Drain Inductance
Measured from the Drain
Lead, 5.0mm (0.2in) from
Header to Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the Source
Lead, 5.0mm (0.2in) from
Header to Source Bonding
Pad
-
15
-
nH
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
-
-
5.0
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
Free Air Operation
-
-
175
L
S
L
D
G
D
S
IRFF130
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF130R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF |
| IRFF131 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:International Rectifier 功能描述: |
| IRFF131R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF |
| IRFF132 | 制造商:International Rectifier 功能描述: |
| IRFF132R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 7A I(D) | TO-205AF |
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