參數(shù)資料
型號(hào): IRFF210
廠商: International Rectifier
英文描述: REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
中文描述: 重復(fù)性雪崩和DV /受好評(píng)的HEXFET剖三極管通孔dt(下至205AF)
文件頁(yè)數(shù): 1/7頁(yè)
文件大小: 325K
代理商: IRFF210
1
File Number
1887.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFF210
2.2A, 200V, 1.500 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17442.
Features
2.2A, 200V
r
DS(ON)
= 1.500
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF210
TO-205AF
IRFF210
NOTE: When ordering, include the entire part number.
D
G
S
SOURCE
GATE
DRAIN
(CASE)
Data Sheet
March 1999
相關(guān)PDF資料
PDF描述
IRFF230 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
IRFF310 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET(1.35A, 400V, 3.600 Ω, N溝道功率MOS場(chǎng)效應(yīng)管)
IRFF310 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
IRFF330 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
IRFF430 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET
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