參數(shù)資料
型號: IRFF130
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET(8.0A, 100V, 0.180 Ohm,N溝道增強型功率MOS場效應(yīng)管)
中文描述: 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 4/7頁
文件大小: 325K
代理商: IRFF130
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
50.0
10.0
1.0
0.1
1.0
10
100
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
10
μ
s
100
μ
s
10ms
100ms
1ms
DC
OPERATION IN THIS AREA
IS LIMITED BY r
DS(ON)
T
J
= MAX RATED
0
10
20
30
40
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
16
12
8
4
0
I
D
,
80
μ
s PULSE TEST
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 7V
V
GS
= 10V
V
GS
= 8V
0
2
0
0.4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.8
1.2
2.0
4
6
I
D
,
8
1.6
10
80
μ
s PULSE TEST
V
GS
= 9V
V
GS
= 8V
V
GS
= 10V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0
4
12
I
D
,
20
8
16
4
8
10
V
DS
> I
D(ON)
x r
DS(ON)MAX
80
μ
s PULSE TEST
125
o
C
-55
o
C
25
o
C
0
0.4
0.6
10
30
50
60
r
D
,
I
D
, DRAIN CURRENT (A)
0
0.2
V
GS
= 10V
V
GS
= 20V
2
μ
s PULSE TEST
20
40
0.5
0.3
0.1
O
)
2.50
1.50
1.00
0.50
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
O
120
2.00
80
V
GS
= 10V
I
D
= 4A
IRFF130
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