- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384494 > IRFF120 (International Rectifier) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) PDF資料下載
參數(shù)資料
| 型號： | IRFF120 |
| 廠商： | International Rectifier |
| 英文描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
| 中文描述： | 重復性雪崩和DV /受好評的HEXFET三極管通孔dt（下至205AF） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 131K |
| 代理商： | IRFF120 |
IRFF120
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
—
—
—
— 175
6.25
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
VSD
trr
QRR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
6.0
24
1.8
240
2.0
V
nS
μC
T
j
= 25°C, IS =6.0A, VGS = 0V
Tj = 25°C, IF = 6.0A, di/dt
≤
100A/
μ
s
VDD
≤
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
—
Typ
—
0.10
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
1.5
—
—
— 0.30 VGS = 10V, ID = 3.5A
— 0.345
VGS =10V, ID = 6.0A
—
4.0 V VDS = VGS, ID = 250
μ
A
—
— S VDS > 15V, IDS = 3.5A
—
25
—
250
μA
VGS(th)
gfs
IDSS
VDS= 80V, VGS=0V
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 6.0A
VDS= 50V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
7.7
0.7
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
17
4.0
7.7
40
70
40
70
—
nA
nC
VDD = 50V, ID = 6.0A,
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
350
150
24
VGS = 0V, VDS = 25V
f = 1.0MHz
—
—
pF
nH
n s
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
相關PDF資料 |
PDF描述 |
|---|---|
| IRFF130 | 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET(8.0A, 100V, 0.180 Ohm,N溝道增強型功率MOS場效應管) |
| IRFF210 | 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET |
| IRFF210 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF) |
| IRFF230 | 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET |
| IRFF310 | 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET(1.35A, 400V, 3.600 Ω, N溝道功率MOS場效應管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF120R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF |
| IRFF121 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF |
| IRFF1210 | 制造商:International Rectifier 功能描述: |
| IRFF121R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF |
| IRFF122 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF |
發(fā)布緊急采購，3分鐘左右您將得到回復。