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參數(shù)資料
| 型號(hào)： | IRFF110 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET(3.5A, 100V, 0.600 Ohm，N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 328K |
| 代理商： | IRFF110 |
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
-
-
3.5
A
Pulse Source to Drain Current (Note 3)
-
-
14
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
t
ON
T
J
= 25
o
C, I
SD
= 3.5A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= 3.5A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= 3.5A, dI
SD
/dt = 100A/
μ
s
Intrinsic Turn-On Time is Negligible. Turn-On
Speed is Substantially Controlled by L
S
+ L
D
-
-
2.5
V
Reverse Recovery Time
-
200
-
ns
Reverse Recovery Charge
-
1.0
-
μ
C
Forward Turn-On Time
-
-
-
-
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 5V, starting T
J
= 25
o
C, L = 2.3mH, R
G
= 25
,
peak I
AS
= 3.5A. See Figures 15, 16.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
2
1
0
25
50
75
100
125
150
4
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
5
3
t
1
, RECTANGULAR PULSE DURATION (s)
10
Z
θ
J
,
T
10
-3
10
-2
10
-1
1
10
-5
10
-4
1
0.01
0.1
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.1
0.02
0.01
0.2
0.5
0.05
SINGLE PULSE
2
IRFF110
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IRFF110R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3.5A I(D) | TO-205AF |
| IRFF111 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFF111R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 3.5A I(D) | TO-205AF |
| IRFF112 | 制造商:GESS 制造商全稱:GESS 功能描述:Power MOS Field-Effect Transistors |
| IRFF112R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3A I(D) | TO-205AF |
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