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參數(shù)資料
| 型號(hào)： | IRFF110 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET(3.5A, 100V, 0.600 Ohm，N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 328K |
| 代理商： | IRFF110 |
1
File Number
1562.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFF110
3.5A, 100V, 0.600 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Features
3.5A, 100V
r
DS(ON)
= 0.600
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF110
TO-205AF
IRFF110
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(CASE)
SOURCE
GATE
Data Sheet
March 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFF120 | 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET(6.0A, 100V , 0.300 Ohm, N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| IRFF120 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
| IRFF130 | 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET(8.0A, 100V, 0.180 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| IRFF210 | 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET |
| IRFF210 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF110R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3.5A I(D) | TO-205AF |
| IRFF111 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFF111R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 3.5A I(D) | TO-205AF |
| IRFF112 | 制造商:GESS 制造商全稱:GESS 功能描述:Power MOS Field-Effect Transistors |
| IRFF112R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3A I(D) | TO-205AF |
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