- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384494 > IRFF110 (HARRIS SEMICONDUCTOR) 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET(3.5A, 100V, 0.600 Ohm，N溝道增強型功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | IRFF110 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET(3.5A, 100V, 0.600 Ohm，N溝道增強型功率MOS場效應(yīng)管) |
| 中文描述： | 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 328K |
| 代理商： | IRFF110 |
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1
10
100
200
V
DS
, DRAIN SOURCE VOLTAGE (V)
30.0
10.0
1.0
0.1
I
D
,
OPERATION IN THIS
AREA LIMITED
BY r
DS(ON)
10
μ
s
100
μ
s
1ms
10ms
100ms
DC
0
10
20
30
40
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
8.0
6.4
4.8
3.2
1.6
0
I
D
,
V
GS
= 10V
V
GS
= 9V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
80
μ
s PULSE TEST
0
1.6
0
1.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2.0
3.0
5.0
3.2
4.8
I
D
,
6.4
4.0
8.0
80
μ
s PULSE TEST
V
GS
= 9V
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0
1.6
4.8
I
D
,
8.0
3.2
6.4
4
8
10
-55
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
80
μ
s PULSE TEST
25
o
C
125
o
C
0
1.0
1.5
2.0
5
10
15
20
r
D
,
I
D
, DRAIN CURRENT (A)
0
0.5
V
GS
= 10V
V
GS
= 20V
2
μ
s PULSE TEST
O
)
2.50
1.50
1.00
0.50
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
O
120
2.00
80
V
GS
= 10V
I
D
= 1.5A
IRFF110
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFF120 | 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET(6.0A, 100V , 0.300 Ohm, N溝道增強型功率MOS場效應(yīng)管) |
| IRFF120 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
| IRFF130 | 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET(8.0A, 100V, 0.180 Ohm,N溝道增強型功率MOS場效應(yīng)管) |
| IRFF210 | 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET |
| IRFF210 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF110R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3.5A I(D) | TO-205AF |
| IRFF111 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFF111R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 3.5A I(D) | TO-205AF |
| IRFF112 | 制造商:GESS 制造商全稱:GESS 功能描述:Power MOS Field-Effect Transistors |
| IRFF112R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3A I(D) | TO-205AF |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。