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參數(shù)資料
| 型號： | IRFD1Z2 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 400 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 57K |
| 代理商： | IRFD1Z2 |
5-4
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. OUTPUT CHARACTERISTICS
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
I
D
,
0.1
10
1
100
1000
0.01
10
LIMITED BY r
DS(ON)
AREA MAY BE
IRFD1Z0, IRFD1Z1
IRFD1Z2,
IRFD1Z3
IRFD1Z2,
IRFD1Z3
T
J
= 150
o
C MAX
SINGLE PULSE
10ms
DC
IRFD1Z0, IRFD1Z2
100
μ
s
10
μ
s
1ms
IRFD1Z0,
IRFD1Z1
IRFD1Z1,
IRFD1Z3
I
D
,
0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
30
40
0.4
0.8
1.2
1.6
2.0
50
0
PULSE DURATION = 80
μ
s
10V
4V
V
GS
= 6V
5V
7V
8V
9V
I
D
,
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
0.4
0.8
1.2
1.6
2.0
5
0
PULSE DURATION = 80
μ
s
8V
4V
10V
9V
V
GS
= 6V
5V
7V
1.2
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
1.0
0.8
0.6
0
8
6
4
2
0
12
0.2
0.4
V
DS
> I
D(ON)
x r
DS(ON)MAX
PULSE DURATION = 80
μ
s
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
10
0
4
8
1
2
r
D
,
I
D
, DRAIN CURRENT (A)
4
0
6
3
V
GS
= 10V
V
GS
= 20V
2
PULSE DURATION = 2
μ
s
O
)
N
2.5
1.5
1.0
0.5
0
-40
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
160
2.0
80
V
GS
= 10V, I
D
= 0.5A
0
O
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFD1Z3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:INT 功能描述:IRFD010 IR 制造商:Harris Corporation 功能描述: 制造商:Motorola Inc 功能描述: |
| IRFD210 | 功能描述:MOSFET N-Chan 200V 0.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD210PBF | 功能描述:MOSFET N-Chan 200V 0.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD210R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 600MA I(D) | TO-250VAR |
| IRFD211 | 制造商:HARRIS 制造商全稱:HARRIS 功能描述:0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS |
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