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參數(shù)資料
| 型號： | IRFD1Z1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 57K |
| 代理商： | IRFD1Z1 |
5-3
Internal Drain Inductance
L
D
Measured From The
Drain Lead, 2mm
(0.08in) From Package
to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.0
-
nH
Internal Source Inductance
L
S
Measured From The
Source Lead, 2mm
(0.08in) From Header to
Source Bonding Pad
-
6.0
-
nH
Thermal Resistance Junction to Ambient
R
θ
JA
Free Air Operation
-
-
120
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
IRFD1Z0, IRFD1Z1
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
0.5
A
IRFD1Z2, IRFD1Z3
-
-
0.4
A
Pulse Source to Drain Current
IRFD1Z0, IRFD1Z1
I
SDM
-
-
4.0
A
IRFD1Z2, IRFD1Z3
-
-
3.2
A
Source to Drain Diode Voltage (Note 2)
IRFD1Z0, IRFD1Z1
V
SD
T
A
= 25
o
C, I
SD
= 0.5A, V
GS
= 0V
T
A
= 25
o
C, I
SD
= 0.4A, V
GS
= 0V
T
J
= 150
o
C, I
SD
= 0.5A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= 0.5A, dI
SD
/dt = 100A/
μ
s
-
-
1.4
V
IRFD1Z2, IRFD1Z3
-
-
1.3
V
Reverse Recovery Time
t
rr
-
100
-
ns
Reverse Recovery Charge
Q
RR
-
0.2
-
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
AMBIENT TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
L
S
L
D
G
D
S
G
D
S
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
T
A
, AMBIENT TEMPERATURE (
o
C)
50
75
100
25
150
0.4
0.2
0
0.1
I
D
D
125
0.3
IRFD1Z0, IRFD1Z1
IRFD1Z2, IRFD1Z3
0.5
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3
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| IRFD1Z2 | 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFD1Z2 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
| IRFD1Z3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:INT 功能描述:IRFD010 IR 制造商:Harris Corporation 功能描述: 制造商:Motorola Inc 功能描述: |
| IRFD210 | 功能描述:MOSFET N-Chan 200V 0.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD210PBF | 功能描述:MOSFET N-Chan 200V 0.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD210R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 600MA I(D) | TO-250VAR |
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