參數(shù)資料
型號(hào)： IRFF9130
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET
中文描述： 6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù)： 2/7頁
文件大?。?/td> 327K
代理商： IRFF9130
4-102
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFF9130
-100
-100
-6.5
-26
±
20
25
0.2
500
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20M
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
D
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
300
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
V
GS
= 0V, I
D
= -250
μ
A, (Figure 10)
V
GS
= V
DS
, I
D
= -250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX,
V
GS
= -10V
V
GS
=
±
20V
V
GS
= -10V, I
D
= -3A, (Figures 8, 9)
V
DS
≥
I
D(ON)
x r
DS(ON)MAX
, I
D
= -3A,
(Figure 12)
-100
-
-
V
Gate to Threshold Voltage
-2.0
-
-4.0
V
Zero-Gate Voltage Drain Current
-
-
-25
μ
A
-
-
-250
μ
A
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
-6.5
-
-
A
Gate to Source Leakage
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
0.25
0.300
Forward Transconductance (Note 2)
2.5
3.5
-
S
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
V
DD
= 0.5 x Rated BV
DSS
, I
D
≈
-6.5A, R
G
= 9.1
,
R
L
= 7.4
for BV
DSS
= -100V
R
L
=5.8
for BV
DSS
= -80V
(Figures 17, 18) MOSFET Switching Times are Es-
sentially Independent of Operating Temperature
-
30
60
ns
Rise Time
-
70
140
ns
Turn-Off Delay Time
-
70
140
ns
Fall Time
-
70
140
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= -10V, I
D
= -6.5A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= -1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
25
45
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
13
-
nC
Gate to Drain “Miller” Charge
-
12
-
nC
Input Capacitance
V
GS
= 0V, V
DS
= -25V, f = 1.0MHz, (Figure 11)
-
500
-
pF
Output Capacitance
-
300
-
pF
Reverse-Transfer Capacitance
-
100
-
pF
Internal Drain Inductance
Measured From the
Drain Lead, 5mm (0.2in)
From Package to Center
of Die
Modified MOSFET Sym-
bol Showing the Internal
Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured From The
Source Lead, 5mm
(0.2in) From Header to
Source Bonding Pad
-
15
-
nH
Junction to Case
R
θ
JC
R
θ
JA
-
-
5.0
o
C/W
o
C/W
Junction to Ambient
Typical Socket Mount
-
-
175
L
S
L
D
G
D
S
IRFF9130
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