參數(shù)資料
型號(hào): IRFF120
廠商: HARRIS SEMICONDUCTOR
元件分類(lèi): 功率晶體管
英文描述: 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET(6.0A, 100V , 0.300 Ohm, N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述: 6 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁(yè)數(shù): 3/7頁(yè)
文件大小: 325K
代理商: IRFF120
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
-
-
6.0
A
Pulse Source to Drain Current (Note 3)
-
-
24
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
t
ON
T
J
= 25
o
C, I
SD
= 6.0A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= 6.0A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= 6.0A, dI
SD
/dt = 100A/
μ
s
Intrinsic Turn-on Time is Negligible, Turn-On
Speed is Substantially controlled by L
S
+ L
D
-
-
2.5
V
Reverse Recovery Time
-
230
-
ns
Reverse Recovery Charge
-
1.0
-
μ
C
Forward Turn-On Time
-
-
-
-
NOTES:
2. Pulse test: pulse width
300
μ
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 1.5mH, R
G
= 25
,
peak I
AS
= 6.0A (Figures 15, 16).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
2.4
1.2
0
25
50
75
100
125
150
4.8
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
6.0
3.6
t
1
, RECTANGULAR PULSE DURATION (s)
10
Z
θ
J
,
T
10
-3
10
-2
10
-1
1
10
-5
10
-4
1.0
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
SINGLE PULSE
0.1
0.02
0.2
0.5
0.01
0.05
t
2
IRFF120
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